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High-field Hall effect and magnetoresistance in Fe3O4 epitaxial thin films up to 30 Tesla

  作者 Fernandez-Pacheco, A; Orna, J; De Teresa, JM; Algarabel, PA; Morellon, L; Pardo, JA; Ibarra, MR; Kampert, E; Zeitler, U  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-26;  页码  262108-262108  
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[摘要]We have measured the Hall effect and the magnetoresistance of epitaxial Fe3O4 thin films grown on MgO (001) in magnetic fields up to 30 T. Using such high fields, it is possible to magnetically saturate films thicker than 40 nm, providing access to intrin

 
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