Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth

[摘要]：We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperat

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