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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共73条记录   High pressure phase transformation in iron under fast compression [作者：Bastea, M; Bastea, S; Becker, R,期刊：Applied Physics Letters, 页码：241911-241911 , 文章类型： Article，,卷期：2009年95-24] We observe kinetic features-velocity loops-at the alpha to epsilon phase transformation of iron, similar with the ones reported when water is frozen into its ice VII phase under comparable experimental conditions. By usi... Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates [作者：Ravash, R; Blasing, J; Hempel, T; Noltemeyer, M; Dadgar, A; Christen, J; Krost, A,期刊：Applied Physics Letters, 页码：242101-242101 , 文章类型： Article，,卷期：2009年95-24] We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18 degrees inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of... Observation of the single-electron regime in a highly tunable silicon quantum dot [作者：Lim, WH; Zwanenburg, FA; Huebl, H; Mottonen, M; Chan, KW; Morello, A; Dzurak, AS,期刊：Applied Physics Letters, 页码：242102-242102 , 文章类型： Article，,卷期：2009年95-24] We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architec... Study of temporal current stability and fluctuations of field emitted electrons from ZnO nanostructure films [作者：Uppireddi, K; Yang, BQ; Feng, PX; Morell, G,期刊：Applied Physics Letters, 页码：242103-242103 , 文章类型： Article，,卷期：2009年95-24] Stable field emission currents and low fluctuations are important feasibility requirements for the application of materials in field emission devices and displays, more than the low turn on fields that are generally cons... Graphene field effect transistors with parylene gate dielectric [作者：Sabri, SS; Levesque, PL; Aguirre, CM; Guillemette, J; Martel, R; Szkopek, T,期刊：Applied Physics Letters, 页码：242104-242104 , 文章类型： Article，,卷期：2009年95-24] We report the fabrication and characterization of graphene field effect transistors with parylene back gate and exposed graphene top surface. A back gate stack of 168 nm parylene on 94 nm thermal silicon oxide permitted ... Selenium and tellurium: Elemental catalysts for conversion of graphite to diamond under high pressure and temperature [作者：Lv, SJ; Hong, SM; Yuan, CS; Hu, Y,期刊：Applied Physics Letters, 页码：242105-242105 , 文章类型： Article，,卷期：2009年95-24] The behavior of six systems of graphite with Sn, Pb, Sb, Bi, Se, and Te was investigated under high-pressure of around 9.0-9.6 GPa and high-temperature 1600-1850 degrees C. The results showed that the selenium and tellur... Monte Carlo simulation of the percolation in Ag30Ge17Se53 amorphous electrolyte films [作者：Chen, L; Li, QC; Guo, HX; Gao, LG; Xia, YD; Yin, J; Liu, ZG,期刊：Applied Physics Letters, 页码：242106-242106 , 文章类型： Article，,卷期：2009年95-24] Monte Carlo simulations using a dielectrophoresis model were performed to investigate the microstructural evolution and the conductance change of an Ag30Ge17Se53 electrolyte film clapped by a Ag active electrode, at whic... Compact silicon double and triple dots realized with only two gates [作者：Pierre, M; Wacquez, R; Roche, B; Jehl, X; Sanquer, M; Vinet, M; Prati, E; Belli, M; Fanciulli, M,期刊：Applied Physics Letters, 页码：242107-242107 , 文章类型： Article，,卷期：2009年95-24] We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nano... Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects [作者：Nishioka, M; Gurney, BA; Marinero, EE; Mireles, F,期刊：Applied Physics Letters, 页码：242108-242108 , 文章类型： Article，,卷期：2009年95-24] InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we repo... Si Esaki diodes with high peak to valley current ratios [作者：Oehme, M; Hahnel, D; Werner, J; Kaschel, M; Kirfel, O; Kasper, E; Schulze, J,期刊：Applied Physics Letters, 页码：242109-242109 , 文章类型： Article，,卷期：2009年95-24] We report room temperature current voltage characteristics of Si p(+)-i-n(+) Esaki diodes integrated on silicon substrates. The diodes were fabricated by low-temperature molecular beam epitaxy. Very high and abrupt p- an... Excess carrier recombination lifetime of bulk n-type 3C-SiC [作者：Grivickas, V; Manolis, G; Gulbinas, K; Jarasiunas, K; Kato, M,期刊：Applied Physics Letters, 页码：242110-242110 , 文章类型： Article，,卷期：2009年95-24] Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation ... Interaction between Na and Li in ZnO [作者：Neuvonen, PT; Vines, L; Kuznetsov, AY; Svensson, BG; Du, XL; Tuomisto, F; Hallen, A,期刊：Applied Physics Letters, 页码：242111-242111 , 文章类型： Article，,卷期：2009年95-24] The interaction between group-Ia elements in ZnO have been studied by implanting Na into hydrothermally grown ZnO samples containing similar to 4x10(17) Li/cm(3) and employing secondary ion mass spectrometry for sample a... Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance [作者：Jung, S; Choi, H; Ju, Y; Chang, M; Jo, M; Lee, J; Yoon, J; Lee, C; Hwang, H,期刊：Applied Physics Letters, 页码：242112-242112 , 文章类型： Article，,卷期：2009年95-24] We investigated advanced impurity trap memory (ITM) with atomic-scale Ti impurities on LaAlO3. Our ITM showed excellent memory characteristics, including a memory window (MW) of 5 V under +12 V/-10 V, similar to 44% reta... Nonlinear current-voltage behavior and giant positive magnetoresistance in nonmagnetic Au/Yttria-stabilized zirconia/Si heterostructures [作者：Qu, TL; Li, J; Zhao, YG; Mei, JW; Liu, X; Tian, HF; Shi, JP; Guo, SM; Li, J; Zheng, DN; Li, JQ,期刊：Applied Physics Letters, 页码：242113-242113 , 文章类型： Article，,卷期：2009年95-24] We report on the nonlinear current-voltage (I-V) behavior and giant positive magnetoresistance (GPMR) in the Au/Yttria-stabilized zirconia/Si heterostructures. The I-V curves of the heterostructures show a rectifying pro... Hole-based memory operation in an InAs/GaAs quantum dot heterostructure [作者：Marent, A; Nowozin, T; Gelze, J; Luckert, F; Bimberg, D,期刊：Applied Physics Letters, 页码：242114-242114 , 文章类型： Article，,卷期：2009年95-24] We present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored info... In-situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing [作者：Wang, WG; Jordan-sweet, J; Miao, GX; Ni, C; Rumaiz, AK; Shah, LR; Fan, X; Parsons, P; Stearrett, R; Nowak, ER; Moodera, JS; Xiao, JQ,期刊：Applied Physics Letters, 页码：242501-242501 , 文章类型： Article，,卷期：2009年95-24] We report the crystallization study of CoFeB/MgO/CoFeB magnetic tunnel junctions using in-situ, time-resolved synchrotron-based x-ray diffraction and transmission electron microscopy. It was found that the crystallizatio...