Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance

[摘要]：We investigated advanced impurity trap memory (ITM) with atomic-scale Ti impurities on LaAlO3. Our ITM showed excellent memory characteristics, including a memory window (MW) of 5 V under +12 V/-10 V, similar to 44% retained charge in 10 yr retention at 8

[全文传递流程]：

一般上传文献全文的时限在1个工作日内