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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共84条记录   Transcription of domain patterns in near-stoichiometric magnesium-doped lithium niobate [作者：Zeng, H; Kong, YF; Tian, TA; Chen, SL; Zhang, L; Sun, TQ; Rupp, R; Xu, JJ,期刊：Applied Physics Letters, 页码：201901-201901 , 文章类型： Article，,卷期：2010年97-20] Recently, light-induced domain reversal has been developed to a promising method for domain engineering, but the depth of reversed domain is only of several tens of microns, which greatly limits its practical application... Point-defect-mediated dehydrogenation of AlH3 [作者：Ismer, L; Janotti, A; Van de Walle, CG,期刊：Applied Physics Letters, 页码：201902-201902 , 文章类型： Article，,卷期：2010年97-20] Based on hybrid density functional calculations, we propose a microscopic mechanism for the dehydrogenation of AlH3. Our results indicate that mass transport mediated by positively charged hydrogen vacancies (V-H(+)) is ... Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet [作者：Ben Sedrine, N; Bouhafs, C; Harmand, JC; Chtourou, R; Darakchieva, V,期刊：Applied Physics Letters, 页码：201903-201903 , 文章类型： Article，,卷期：2010年97-20] We study the effect of nitrogen on the GaAs0.9-xNxSb0.1 (x = 0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional depen... Major impacts of point defects and impurities on the carrier recombination dynamics in AlN [作者：Chichibu, SF; Onuma, T; Hazu, K; Uedono, A,期刊：Applied Physics Letters, 页码：201904-201904 , 文章类型： Article，,卷期：2010年97-20] Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiat... Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution [作者：Weng, XJ; Robinson, JA; Trumbull, K; Cavalero, R; Fanton, MA; Snyder, D,期刊：Applied Physics Letters, 页码：201905-201905 , 文章类型： Article，,卷期：2010年97-20] Using directly interpretable atomic-resolution cross-sectional scanning transmission electron microscopy, we have investigated the structure of few-layer epitaxial graphene (EG) on 6H-SiC(0001). We show that the buried i... Optically generated adaptive localized structures in confined chiral liquid crystals doped with fullerene [作者：Trushkevych, O; Ackerman, P; Crossland, WA; Smalyukh, II,期刊：Applied Physics Letters, 页码：201906-201906 , 文章类型： Article，,卷期：2010年97-20] We report the facile optical creation of switchable localized structures in chiral liquid crystals doped with fullerene. In a cholesteric cell unwound by vertical boundary conditions, the initially dispersed fullerenes a... Impact of surfaces on the optical properties of GaAs nanowires [作者：Demichel, O; Heiss, M; Bleuse, J; Mariette, H; Morral, AFI,期刊：Applied Physics Letters, 页码：201907-201907 , 文章类型： Article，,卷期：2010年97-20] The effect of surfaces on the optical properties of GaAs nanowires is evidenced by comparing nanowires with or without an AlGaAs capping shell as a function of the diameter. We find that the optical properties of unpassi... Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates [作者：Gobaut, B; Penuelas, J; Cheng, J; Chettaoui, A; Largeau, L; Hollinger, G; Saint-Girons, G,期刊：Applied Physics Letters, 页码：201908-201908 , 文章类型： Article，,卷期：2010年97-20] Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si template... Magnetic and electronic switching properties of photochromic diarylethene with two nitronyl nitroxides [作者：Zhu, L; Yao, KL; Liu, ZL,期刊：Applied Physics Letters, 页码：202101-202101 , 文章类型： Article，,卷期：2010年97-20] Magnetic and electronic switching properties of single photochromic diarylethene with two nitronyl nitroxides sandwiched between two gold surfaces for closed and open configurations were investigated theoretically. Apart... Room temperature gate modulation of electron spin relaxation time in, (110)-oriented GaAs/AlGaAs quantum wells [作者：Iba, S; Koh, S; Kawaguchi, H,期刊：Applied Physics Letters, 页码：202102-202102 , 文章类型： Article，,卷期：2010年97-20] A (110)-oriented p-i-n structure with GaAs/AlGaAs quantum wells (QWs) was fabricated, and the effect of an applied electric field on the electron spin relaxation time was investigated by utilizing polarization-and time-r... A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor [作者：Kang, MK; Kim, SJ; Kim, HJ,期刊：Applied Physics Letters, 页码：202103-202103 , 文章类型： Article，,卷期：2010年97-20] Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalli... An in situ tunable radio-frequency quantum point contact [作者：Muller, T; Kueng, B; Hellmuller, S; Studerus, P; Ensslin, K; Ihn, T; Reinwald, M; Wegscheider, W,期刊：Applied Physics Letters, 页码：202104-202104 , 文章类型： Article，,卷期：2010年97-20] Incorporating a variable capacitance diode into a radio-frequency (rf) matching circuit allows us to in situ tune the resonance frequency of a rf quantum point contact, increasing the versatility of the latter as a fast ... Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation [作者：Park, H; Xu, Y; Varga, K; Qi, JB; Feldman, LC; Lupke, G; Tolk, N,期刊：Applied Physics Letters, 页码：202105-202105 , 文章类型： Article，,卷期：2010年97-20] We report the experimental determination of the threshold energy for filling the B+ induced charge traps in SiO2 near the Si/SiO2 interface, using a two-color pump-probe approach involving internal photoemission and seco... Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers [作者：Miyazawa, T; Ito, M; Tsuchida, H,期刊：Applied Physics Letters, 页码：202106-202106 , 文章类型： Article，,卷期：2010年97-20] The carrier lifetime of similar to 265 mu m thick n-type 4H silicon carbide epilayers prepared using the carbon-implantation/annealing method was evaluated. An extraordinarily long minority carrier lifetime of 18.5 mu s ... Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures [作者：Bhat, TN; Roul, B; Rajpalke, MK; Kumar, M; Krupanidhi, SB; Sinha, N,期刊：Applied Physics Letters, 页码：202107-202107 , 文章类型： Article，,卷期：2010年97-20] The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These d... Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics [作者：Alshareef, HN; Caraveo-Frescas, JA; Cha, DK,期刊：Applied Physics Letters, 页码：202108-202108 , 文章类型： Article，,卷期：2010年97-20] Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found tha...