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A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

  作者 Kang, MK; Kim, SJ; Kim, HJ  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-20;  页码  202103-202103  
  关联知识点  
 

[摘要]Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. T

 
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