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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共62条记录   Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV [作者：Pitters, JL; Piva, PG; Wolkow, RA,期刊：Journal Of Vacuum Science & Technology B, 页码：21806-21806 , 文章类型： Article，,卷期：2012年30-2] Degenerately doped (arsenic) n-type hydrogen terminated silicon (100) samples were prepared using various heat treatments for ultrahigh vacuum scanning tunneling microscopy (STM) and spectroscopy (STS) analysis. Samples ... Simulation of the electron field emission characteristics of a flat panel x-ray source [作者：Posada, CM; Castano, CH; Grant, EJ; Lee, HK,期刊：Journal Of Vacuum Science & Technology B, 页码：22201-22201 , 文章类型： Article，,卷期：2012年30-2] A distributed flat panel x ray source is designed as an alternative for medical and industrial imaging fields. The distributed x ray source corresponds to a two dimensional array of micro (93 mu m) x ray cells similar in... Structural and luminescent properties of bulk InAsSb [作者：Sarney, WL; Svensson, SP; Hier, H; Kipshidze, G; Donetsky, D; Wang, D; Shterengas, L; Belenky, G,期刊：Journal Of Vacuum Science & Technology B, 页码：02B105-02B105 , 文章类型： Article，,卷期：2012年30-2] The strong bandgap bowing in the InAsxSb1-x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buff... RHEED transients during InAs quantum dot growth by MBE [作者：Shimomura, K; Shirasaka, T; Tex, DM; Yamada, F; Kamiya, I,期刊：Journal Of Vacuum Science & Technology B, 页码：02B128-02B128 , 文章类型： Article，,卷期：2012年30-2] The growth mechanisms of InAs self-assembled quantum dots (QDs) on GaAs(001) by molecular beam epitaxy are studied by reflection high-energy electron diffraction (RHEED) transients along the two major axes, [110] and [1 ... InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE [作者：Skierbiszewski, C; Siekacz, M; Turski, H; Muziol, G; Sawicka, M; Feduniewicz-Zmuda, A; Smalc-Koziorowska, J; Perlin, P; Grzanka, S; Wasilewski, ZR; Kucharski, R; Porowski, S,期刊：Journal Of Vacuum Science & Technology B, 页码：02B102-02B102 , 文章类型： Article，,卷期：2012年30-2] This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular beam epitaxy that operate at the region of 450-460 nm. The single quantum well LDs were grown on several types of c-plane b... Growth of GaSb1-xBix by molecular beam epitaxy [作者：Song, YX; Wang, SM; Roy, IS; Shi, PX; Hallen, A,期刊：Journal Of Vacuum Science & Technology B, 页码：02B114-02B114 , 文章类型： Article，,卷期：2012年30-2] Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were stud... Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates [作者：Steenbergen, EH; Nunna, K; Ouyang, L; Ullrich, B; Huffaker, DL; Smith, DJ; Zhang, YH,期刊：Journal Of Vacuum Science & Technology B, 页码：02B107-02B107 , 文章类型： Article，,卷期：2012年30-2] Strain-balanced InAs/InAs1-xSbx type-II superlattices (SLs) on GaSb substrates with 0.27 <= x <= 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 mu m. The calculated SL bandga... Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy [作者：Storm, DF; Meyer, DJ; Katzer, DS; Binari, SC; Paskova, T; Preble, EA; Evans, KR; Zhou, L; Smith, DJ,期刊：Journal Of Vacuum Science & Technology B, 页码：02B113-02B113 , 文章类型： Article，,卷期：2012年30-2] The authors have investigated the growth and structural and electrical properties of homoepitaxial GaN layers and GaN/AlGaN heterostructures grown on free-standing, hydride vapor phase epitaxy grown, N-polar GaN: Fe subs... Molecular beam epitaxy control and photoluminescence properties of InAsBi [作者：Svensson, SP; Hier, H; Sarney, WL; Donetsky, D; Wang, D; Belenky, G,期刊：Journal Of Vacuum Science & Technology B, 页码：02B109-02B109 , 文章类型： Article，,卷期：2012年30-2] Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was ... Integrated processing of contrast pulse sequencing ultrasound imaging for enhanced active contrast of hollow gas filled silica nanoshells and microshells [作者：Ta, CN; Liberman, A; Martinez, HP; Barback, CV; Mattrey, RF; Blair, SL; Trogler, WC; Kummel, AC; Wu, Z,期刊：Journal Of Vacuum Science & Technology B, 页码：02C104-02C104 , 文章类型： Article，,卷期：2012年30-2] In recent years, there have been increasing developments in the field of contrast-enhanced ultrasound both in the creation of new contrast agents and in imaging modalities. These contrast agents have been employed to stu... Automating tumor classification with pixel-by-pixel contrast-enhanced ultrasound perfusion kinetics [作者：Ta, CN; Kono, Y; Barback, CV; Mattrey, RF; Kummel, AC,期刊：Journal Of Vacuum Science & Technology B, 页码：02C103-02C103 , 文章类型： Article，,卷期：2012年30-2] Contrast-enhanced ultrasound (CEUS) enables highly specific time-resolved imaging of vasculature by intravenous injection of similar to 2 mu m gas filled microbubbles. To develop a quantitative automated diagnosis of bre... Structural and magnetic characterization of superparamagnetic iron platinum nanoparticle contrast agents for magnetic resonance imaging [作者：Taylor, RM; Huber, DL; Monson, TC; Esch, V; Sillerud, LO,期刊：Journal Of Vacuum Science & Technology B, 页码：02C101-02C101 , 文章类型： Article，,卷期：2012年30-2] The authors report the synthesis, from simple salts, and the physical characterization of superparamagnetic iron platinum nanoparticles (SIPPs) suitable for use as contrast agents in magnetic resonance imaging. The prope... Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth [作者：Tex, DM; Kamiya, I,期刊：Journal Of Vacuum Science & Technology B, 页码：02B120-02B120 , 文章类型： Article，,卷期：2012年30-2] Upconversion through excitation of bulk GaAs is investigated by change in crystal growth conditions with electron beam (e-beam). The upconverted photoluminescence intensity is enhanced several times by striking the sourc... Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE [作者：Tivakornsasithorn, K; Pimpinella, RE; Nguyen, V; Liu, X; Dobrowolska, M; Furdyna, JK,期刊：Journal Of Vacuum Science & Technology B, 页码：02B115-02B115 , 文章类型： Article，,卷期：2012年30-2] GaAs/Fe/Au core-shell nanowires were grown on GaAs(111) B substrates by molecular beam epitaxy. Scanning electron microscopy images show that the Fe shell has successfully coated the sidewalls of GaAs nanowires. Magnetic... Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication (vol 29, 061604, 2011) [作者：Tjerkstra, RW; Woldering, LA; van den Broek, JM; Roozeboom, F; Setija, ID; Vos, WL,期刊：Journal Of Vacuum Science & Technology B, 页码：23401-23401 , 文章类型： Correction，,卷期：2012年30-2] Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates [作者：Vazquez-Cortes, D; Cruz-Hernandez, E; Mendez-Garcia, VH; Shimomura, S; Lopez-Lopez, M,期刊：Journal Of Vacuum Science & Technology B, 页码：02B125-02B125 , 文章类型： Article，,卷期：2012年30-2] This work studies the Si-doping of GaAs on (631)-oriented substrates as a function of the As-4-beam equivalent pressure (P-As). The electrical properties obtained by Hall effect measurements show that the mobility of the...