Molecular beam epitaxy control and photoluminescence properties of InAsBi

[摘要]：Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra. (C) 2012 American Vacuum Society. [DOI:10.1116/1.3672023]

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