Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth

[摘要]：Upconversion through excitation of bulk GaAs is investigated by change in crystal growth conditions with electron beam (e-beam). The upconverted photoluminescence intensity is enhanced several times by striking the source fluxes with e-beam during molecular beam epitaxy (MBE) growth. Experimental evidence for a shallow intermediate state being responsible for this upconversion is presented. It is suggested that the intermediate state may be formed by shallow exciton trap states induced by As anti-site defects, which can be increased with e-beam during MBE growth. (C) 2012 American Vacuum Society. [DOI:10.1116/1.3679547]

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