- Enhanced sensing performance by the plasmonic analog of electromagnetically induced transparency in active metamaterials
[作者:Dong, ZG; Liu, H; Cao, JX; Li, T; Wang, SM; Zhu, SN; Zhang, X,期刊:Applied Physics Letters, 页码:114101-114101 , 文章类型: Article,,卷期:2010年97-11]
- The gain-assisted plasmonic analog of electromagnetically induced transparency (EIT) in a metallic metamaterial is investigated for the purpose to enhance the sensing performance of the EIT-like plasmonic structure. The ...
- Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer (vol 97, 011901, 2010)
[作者:Dadoenkova, YS; Lyubchanskii, IL; Lee, YP; Rasing, T,期刊:Applied Physics Letters, 页码:119901-119901 , 文章类型: Correction,,卷期:2010年97-11]
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- Comparative and quantitative study of neutral debris emanated from tin plasmas produced by neodymium-doped yttrium-aluminum-garnet and carbon dioxide laser pulses
[作者:Matsuoka, Y; Nakai, Y; Fujioka, S; Maeda, S; Shimomura, M; Shimada, Y; Sunahara, A; Nishimura, H; Yoshida, M,期刊:Applied Physics Letters, 页码:111502-111502 , 文章类型: Article,,卷期:2010年97-11]
- Amount of neutral debris emanated from extreme ultraviolet light source must be minimized to maximize its lifetime. Emanation of neutral atomic debris was experimentally investigated using laser-induced-fluorescence tech...
- Rare-earth plasma extreme ultraviolet sources at 6.5-6.7 nm
[作者:Otsuka, T; Kilbane, D; White, J; Higashiguchi, T; Yugami, N; Yatagai, T; Jiang, WH; Endo, A; Dunne, P; O'Sullivan, G,期刊:Applied Physics Letters, 页码:111503-111503 , 文章类型: Article,,卷期:2010年97-11]
- We have demonstrated a laser-produced plasma extreme ultraviolet source operating in the 6.5-6.7 nm region based on rare-earth targets of Gd and Tb coupled with a Mo/B4C multilayer mirror. Multiply charged ions produce s...
- Single crystal-like selection rules for unipolar-axis oriented tetragonal Pb(Zr,Ti)O-3 thick epitaxial films
[作者:Nakajima, M; Fujisawa, T; Ehara, Y; Yamada, T; Funakubo, H; Naganuma, H; Okamura, S; Nishida, K; Yamamoto, T; Osada, M,期刊:Applied Physics Letters, 页码:111901-111901 , 文章类型: Article,,卷期:2010年97-11]
- We investigated the polarized Raman spectra of a strain-free, unipolar-axis oriented tetragonal Pb(Zr,Ti)O-3 thick epitaxial film. We evaluated the single crystal-like selection rules of the A(1)- and E-symmetry componen...
- Dielectric functions and interband transitions of In1-xAlxSb alloys
[作者:Yoon, JJ; Kim, TJ; Jung, YW; Aspnes, DE; Kim, YD; Kim, HJ; Chang, YC; Shin, SH; Song, JD,期刊:Applied Physics Letters, 页码:111902-111902 , 文章类型: Article,,卷期:2010年97-11]
- Pseudodielectric functions of In1-xAlxSb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more ac...
- Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films
[作者:Sarkar, I; Laux, M; Demokritova, J; Ruffing, A; Mathias, S; Wei, J; Solovyeva, V; Rudloff, M; Naghavi, SS; Felser, C; Huth, M; Aeschlimann, M,期刊:Applied Physics Letters, 页码:111906-111906 , 文章类型: Article,,卷期:2010年97-11]
- We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemi...
- Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy
[作者:Ye, JD; Pannirselvam, S; Lim, ST; Bi, JF; Sun, XW; Lo, GQ; Teo, KL,期刊:Applied Physics Letters, 页码:111908-111908 , 文章类型: Article,,卷期:2010年97-11]
- We report the formation of two-dimensional electron gas (2DEG) at the Zn1-xMgxO/ZnO interface grown by metal-organic vapor phase epitaxy on sapphire substrates. The existence of the 2DEG is confirmed by the observation o...
- Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
[作者:Lorenz, K; Alves, E; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M,期刊:Applied Physics Letters, 页码:111911-111911 , 文章类型: Article,,卷期:2010年97-11]
- Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 degrees C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 degrees C. In...
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