[摘要]：We report the formation of two-dimensional electron gas (2DEG) at the Zn1-xMgxO/ZnO interface grown by metal-organic vapor phase epitaxy on sapphire substrates. The existence of the 2DEG is confirmed by the observation of Shubnikov-de Haas oscillations and the integer quantum Hall effect. In particular, the Zn0.8Mg0.2O/ZnO heterostructure shows a high Hall mobility of 2138 cm(2)/V s with a carrier sheet density of 3.51x10(12) cm(-2) at 1.4 K. We attribute the origin of 2DEG to be the donor states on ZnMgO surface. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness and Mg composition (x) are also investigated. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489101]
