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  • Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 mu m
    [作者:Elvira, D; Michon, A; Fain, B; Patriarche, G; Beaudoin, G; Robert-Philip, I; Vachtomin, Y; Divochiy, AV; Smirnov, KV; Gol'tsman, GN; Sagnes, I; Beveratos, A,期刊:Applied Physics Letters, 页码:131907-131907 , 文章类型: Article,,卷期:2010年97-13]
  • By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 an...
  • Size dependent carrier recombination in ZnO nanocrystals
    [作者:Pozina, G; Yang, LL; Zhao, QX; Hultman, L; Lagoudakis, PG,期刊:Applied Physics Letters, 页码:131909-131909 , 文章类型: Article,,卷期:2010年97-13]
  • Experimental and theoretical studies of fluorescence decay were performed for colloidal ZnO nanocrystals. The fluorescence lifetime reduces from 22 ps to similar to 6 ps with decreasing nanocrystal radius. We postulate t...
  • Straining of SiGe ultrathin films with mesoporous Si substrates
    [作者:Boucherif, A; Blanchard, NP; Marty, O; Regreny, P; Guillot, G; Grenet, G; Lysenko, V,期刊:Applied Physics Letters, 页码:131910-131910 , 文章类型: Article,,卷期:2010年97-13]
  • We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in ...