[摘要]：We report on the fabrication and characterization of ultrathin (down to 50 nm) tensile strained SiGe films on mesoporous Si substrates. Low temperature oxidation of the porous substrate relaxes the compressive strain in the as grown monocrystalline (mc) SiGe. Applying this method to a 50 nm thick mc-Si0.72Ge0.28 film, a tensile strain >0.78% can be achieved without compromising crystalline quality and up to 1.45 % without the appearance of cracks. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3494594]
