| |
[摘要]：Coupling e(-)-h(+) and gas phase plasmas with a strong electric field across a potential barrier yields a transistor providing photosensitivity and voltage gain but also a light-emitting collector whose radiative output can be switched and modulated. This optoelectronic device relies on the correspondence between the properties of a low temperature, nonequilibrium plasma and those for the e(-)-h(+) plasma in an n-type semiconductor. Hysteresis observed in the collector current-base current characteristics is attributed primarily to charge stored in the base, and the photogeneration of e(-)-h(+) pairs at the base-collector junction. Extinguishing the collector plasma requires an emitter-base junction reverse bias of <1 V. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488831] |
|
