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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共99条记录   Growth of high-density vertically aligned arrays of carbon nanotubes by plasma-assisted catalyst pretreatment [作者：Esconjauregui, S; Bayer, BC; Fouquet, M; Wirth, CT; Ducati, C; Hofmann, S; Robertson, J,期刊：Applied Physics Letters, 页码：173115-173115 , 文章类型： Article，,卷期：2009年95-17] A plasma-assisted thermal pretreatment of catalyst films (Ni, Co, or Fe) greatly facilitates the direct growth of high-density vertically aligned arrays of small diameter carbon nanotubes (CNTs) on conductive TiN by pure... Thermochromic polymer opals [作者：Sussman, J; Snoswell, D; Kontogeorgos, A; Baumberg, JJ; Spahn, P,期刊：Applied Physics Letters, 页码：173116-173116 , 文章类型： Article，,卷期：2009年95-17] Large-scale shear-ordered photonic crystals are shown to exhibit unusual thermochromic properties. By balancing the refractive index of the polymer core and composite shell components at room temperature, transparent fil... Thermal annealing induced bicontinuous networks in bulk heterojunction solar cells and bipolar field-effect transistors [作者：Kong, H; Moon, JS; Cho, NS; Jung, IH; Park, MJ; Park, JH; Cho, S; Shim, HK,期刊：Applied Physics Letters, 页码：173301-173301 , 文章类型： Article，,卷期：2009年95-17] Polymer bulk heterojunction solar cells fabricated from poly (2,5-bis(3'-dodecyl-2,2'-bithiophen-5-yl)-3,6-dimethylthieno [3,2-b] thiophene):[6,6]-phenyl-C-61-butric acid methyl ester (1:1, w/w (blend showed significantl... The effect of UV ozone treatment on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) [作者：Helander, MG; Wang, ZB; Greiner, MT; Liu, ZW; Lian, K; Lu, ZH,期刊：Applied Physics Letters, 页码：173302-173302 , 文章类型： Article，,卷期：2009年95-17] The interface between ultraviolet (UV) ozone treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (alpha-NPD) was investigated usi... Electronegativity equalization model for interface barrier formation at reactive metal/organic contacts [作者：Tang, JX; Li, YQ; Wang, SD; Lee, CS; Lee, ST,期刊：Applied Physics Letters, 页码：173303-173303 , 文章类型： Article，,卷期：2009年95-17] A general model based on electronegativity equalization method (EEM) is proposed for a quantitative formulation of barrier formation at reactive metal/organic interfaces. The present model predicts for molecular bonding ... Photocurrent enhancement in polymer:fullerene bulk heterojunction solar cells doped with a phosphorescent molecule [作者：Rand, BP; Girotto, C; Mityashin, A; Hadipour, A; Genoe, J; Heremans, P,期刊：Applied Physics Letters, 页码：173304-173304 , 文章类型： Article，,卷期：2009年95-17] We demonstrate photocurrent enhancement of up to 20% in polymer:fullerene bulk heterojunction photovoltaic cells via the incorporation of a phosphorescent dopant, without degradation in the open-circuit voltage or fill f... Exciton switching and Peierls transitions in hybrid inorganic-organic self-assembled quantum wells [作者：Pradeesh, K; Baumberg, JJ; Prakash, GV,期刊：Applied Physics Letters, 页码：173305-173305 , 文章类型： Article，,卷期：2009年95-17] The switching behavior of exciton absorption and photoluminescence is systematically explored in hybrid inorganic-organic multiple quantum well structures, based on (C12H25NH3)(2)PbI4 thin films and single crystals. Two ... In vacuo measurement of the sensitivity limit of planar Bragg grating sensors for monolayer detection [作者：Parker, RM; Gates, JC; Grossel, MC; Smith, PGR,期刊：Applied Physics Letters, 页码：173306-173306 , 文章类型： Article，,卷期：2009年95-17] An exposed Bragg grating incorporated into a planar waveguide was used to form an optical device that acts as a refractive index sensor. The exposed evanescent field causes the Bragg peak to be sensitive to the refractiv... Thermal crosslinking of organic semiconducting polythiophene improves transverse hole conductivity [作者：Gearba, IR; Nam, CY; Pindak, R; Black, CT,期刊：Applied Physics Letters, 页码：173307-173307 , 文章类型： Article，,卷期：2009年95-17] Thermal crosslinking using a suitable radical initiator simultaneously improves electrical conductivity in the semiconducting polymer poly(3-hexylthiophene) and makes the material insoluble. Crosslinked polythiophene sho... Relaxation and emittance growth of a thermal charged-particle beam [作者：Teles, TN; Pakter, R; Levin, Y,期刊：Applied Physics Letters, 页码：173501-173501 , 文章类型： Article，,卷期：2009年95-17] We present a theory that allows us to accurately calculate the distribution functions and the emittance growth of a thermal charged-particle beam after it relaxes to equilibrium. The theory can be used to obtain the frac... Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells [作者：Rusu, M; Bar, M; Lehmann, S; Sadewasser, S; Weinhardt, L; Kaufmann, CA; Strub, E; Rohrich, J; Bohne, W; Lauermann, I; Jung, C; Heske, C; Lux-Steiner, MC,期刊：Applied Physics Letters, 页码：173502-173502 , 文章类型： Article，,卷期：2009年95-17] The chemical structure of the CdS/CuGaSe2 chalcopyrite solar cell buffer/absorber interface is investigated by combining element depth profiling using elastic recoil detection analysis and surface-near bulk sensitive x-r... Virtual circular array using material-embedded linear source distributions [作者：Kwon, DH,期刊：Applied Physics Letters, 页码：173503-173503 , 文章类型： Article，,卷期：2009年95-17] Linear arrays of sources embedded inside a thin material slab are designed such that they radiate the same fields as a circular array of radiators in free space in a two-dimensional configuration. The design is based on ... Fabrication and characterization of InGaN p-i-n homojunction solar cell [作者：Cai, XM; Zeng, SW; Zhang, BP,期刊：Applied Physics Letters, 页码：173504-173504 , 文章类型： Article，,卷期：2009年95-17] InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (V-oc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocki... Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate [作者：Pour, SA; Nguyen, BM; Bogdanov, S; Huang, EK; Razeghi, M,期刊：Applied Physics Letters, 页码：173505-173505 , 文章类型： Article，,卷期：2009年95-17] We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 mu m, on GaAs substrate. Despite a 7.3% lattice mismatch to the substra... Fabrication of large addition energy quantum dots in graphene [作者：Moser, J; Bachtold, A,期刊：Applied Physics Letters, 页码：173506-173506 , 文章类型： Article，,卷期：2009年95-17] We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron current. This results i... Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes [作者：Meneghini, M; Trivellin, N; Pavesi, M; Manfredi, M; Zehnder, U; Hahn, B; Meneghesso, G; Zanoni, E,期刊：Applied Physics Letters, 页码：173507-173507 , 文章类型： Article，,卷期：2009年95-17] This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and luminescence in light-emitting diodes based on InGaN. The results of the analysis suggest that (i) the main mecha...