Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

[摘要]：We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 mu m, on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with pol

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