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Fabrication and characterization of InGaN p-i-n homojunction solar cell

  作者 Cai, XM; Zeng, SW; Zhang, BP  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-17;  页码  173504-173504  
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[摘要]InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (V-oc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics

 
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