个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共122条记录   Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure [作者：Hao, LZ; Zhu, J; Luo, WB; Zeng, HZ; Li, YR; Huang, W; Liao, XW; Zhang, Y,期刊：Applied Physics Letters, 页码：232907-232907 , 文章类型： Article，,卷期：2009年95-23] A metal-ferroelectric-semiconductor structure was fabricated epitaxially by depositing a LiNbO3 film on the surface of the AlGaN/GaN template with two dimensional electron gas (2DEG). The capacitance-voltage characterist... High remnant polarization in (Sr0.7Bi0.2)TiO3-(Na0.5Bi0.5)TiO3 solid solutions [作者：Ang, C; Yu, Z,期刊：Applied Physics Letters, 页码：232908-232908 , 文章类型： Article，,卷期：2009年95-23] The dielectric and ferroelectric properties of (1-z) (Sr0.7Bi0.2)TiO3-z(Na0.5Bi0.5)TiO3 solid solutions with z=0.65-1 are studied. High remnant polarization of similar to 51 mu C/cm(2) with a coercive field of 50 kV/cm, ... Dielectric elastomers of interpenetrating networks [作者：Suo, ZG; Zhu, J,期刊：Applied Physics Letters, 页码：232909-232909 , 文章类型： Article，,卷期：2009年95-23] Recent experiments have shown that a voltage can induce a large deformation in an elastomer of interpenetrating networks. To understand the observation, this paper describes a model of interpenetrating networks of long a... Low temperature x-ray diffraction study of the phase transitions in Sr1-xCaxTiO3 (x=0.02, 0.04): Evidence for ferrielectric ordering [作者：Mishra, SK; Pandey, D,期刊：Applied Physics Letters, 页码：232910-232910 , 文章类型： Article，,卷期：2009年95-23] X-ray diffraction studies on Sr1-x Ca-x TiO3 in the temperature range 12 to 300 K reveal cubic to tetragonal (I4/mcm) antiferrodistortive and tetragonal to orthorhombic (Ic2m) polar phase transitions at similar to 170 an... Encoding and decoding nanoscale thermal barcodes for ultrahigh capacity identification systems [作者：Ma, ZY; Hong, Y; Zhang, MH; Su, M,期刊：Applied Physics Letters, 页码：233101-233101 , 文章类型： Article，,卷期：2009年95-23] An ultrahigh capacity coding system is created based on the solid to liquid phase changes of a variety of nanoparticles, which are designed and prepared with sharp, discrete melting peaks and encapsulated inside nonmelti... Room temperature piezoelectric displacement detection via a silicon field effect transistor [作者：Mahboob, I; Nishiguchi, K; Fujiwara, A; Yamaguchi, H,期刊：Applied Physics Letters, 页码：233102-233102 , 文章类型： Article，,卷期：2009年95-23] An electromechanical oscillator embedded with a two dimensional electron gas is capacitively coupled to a silicon field effect transistor (Si-FET). The piezovoltage induced by the mechanical motion modulates the current ... Controlling properties of field effect transistors by intermolecular cross-linking of molecular dipoles [作者：Paska, Y; Haica, H,期刊：Applied Physics Letters, 页码：233103-233103 , 文章类型： Article，,卷期：2009年95-23] In this study, we show that systematic molecular control over a silicon-on-insulator field effect transistor (SOI-FET) device can be achieved by controlling the Si-O-Si intermolecular interactions between adjacent trichl... Freestanding, bendable thin film for supercapacitors using DNA-dispersed double walled carbon nanotubes [作者：Cooper, L; Amano, H; Hiraide, M; Houkyou, S; Jang, IY; Kim, YJ; Muramatsu, H; Kim, JH; Hayashi, T; Kim, YA; Endo, M; Dresselhaus, MS,期刊：Applied Physics Letters, 页码：233104-233104 , 文章类型： Article，,卷期：2009年95-23] Freestanding, thin, and bendable electrodes for supercapacitors are fabricated by filtering DNA-dispersed double walled carbon nanotubes (DWNTs) into a thin film and thermally treating the film in argon. We found that DN... Stress and its effect on optical properties of AlN nanorods [作者：Ji, XH; Zhang, QY; Ling, ZY; Lau, SP,期刊：Applied Physics Letters, 页码：233105-233105 , 文章类型： Article，,卷期：2009年95-23] The stress states in AlN nanorods deposited on Si and its effect on optical properties have been investigated by means of Raman scattering and photoluminescence methods. The observed frequency downshift and linewidth bro... Cavity-controlled radiative recombination of excitons in thin-film solar cells [作者：Vuong, LT; Kozyreff, G; Betancur, R; Martorell, J,期刊：Applied Physics Letters, 页码：233106-233106 , 文章类型： Article，,卷期：2009年95-23] We study the performance of photovoltaic devices when controlling the exciton radiative recombination time. We demonstrate that when high-quantum-yield fluorescent photovoltaic materials are placed within an optical cavi... Tailoring the magnetic anisotropy in CoRh nanoalloys [作者：Munoz-Navia, M; Dorantes-Davila, J; Zitoun, D; Amiens, C; Jaouen, N; Rogalev, A; Respaud, M; Pastor, GM,期刊：Applied Physics Letters, 页码：233107-233107 , 文章类型： Article，,卷期：2009年95-23] CoRh alloy nanoparticles (NPs) show nontrivial correlations between chemical and magnetic order that lead to a remarkable nonmonotonous dependence of the magnetic anisotropy energy as a function of composition. Combining... Direct writing and characterization of poly(p-phenylene vinylene) nanostructures [作者：Wang, DB; Kim, S; Underwood, WD; Giordano, AJ; Henderson, CL; Dai, ZT; King, WP; Marder, SR; Riedo, E,期刊：Applied Physics Letters, 页码：233108-233108 , 文章类型： Article，,卷期：2009年95-23] We report the use of thermochemical nanolithography to convert a precursor polymer film to poly(p-phenylene vinylene) with sub-100 nm spatial resolution, in ambient conditions. The local thermochemical conversion is veri... Diffusion-gradient-induced length instabilities in the catalytic growth of carbon nanotubes [作者：Gamalski, A; Moore, ES; Treacy, MMJ; Sharma, R; Rez, P,期刊：Applied Physics Letters, 页码：233109-233109 , 文章类型： Article，,卷期：2009年95-23] We report in situ transmission electron microscopy observations of length instabilities in the growth of straight-wall carbon nanotubes. The nanotubes are grown at: T < 725 degrees C, P < 80 mTorr by chemical vapor decom... Study of AlN dielectric film on graphene by Raman microscopy [作者：Jin, Z; Su, YB; Chen, JW; Liu, XY; Wu, DX,期刊：Applied Physics Letters, 页码：233110-233110 , 文章类型： Article，,卷期：2009年95-23] Dielectric film on graphene severely affects the performance of graphene field-effect transistors (GFETs). The authors investigated AlN dielectric film on graphene by Raman microscopy. AlN deposition led to the appearanc... Investigating the regrowth surface of Si:P delta-layers toward vertically stacked three dimensional devices [作者：McKibbin, SR; Clarke, WR; Fuhrer, A; Reusch, TCG; Simmons, MY,期刊：Applied Physics Letters, 页码：233111-233111 , 文章类型： Article，,卷期：2009年95-23] We investigate the surface quality of encapsulated Si:P delta-layers for the fabrication of multilayer devices with the potential to create architectures with sub 20 nm resolution in all three spatial dimensions. We use ... Power-scaling performance of a three-dimensional tritium betavoltaic diode [作者：Liu, BJ; Chen, KP; Kherani, NP; Zukotynski, S,期刊：Applied Physics Letters, 页码：233112-233112 , 文章类型： Article，,卷期：2009年95-23] Three-dimensional diodes fabricated by electrochemical etching are exposed to tritium gas at pressures from 0.05 to 33 atm at room temperature to examine its power scaling performance. It is shown that the three-dimensio...