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Controlling properties of field effect transistors by intermolecular cross-linking of molecular dipoles

  作者 Paska, Y; Haica, H  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-23;  页码  233103-233103  
  关联知识点  
 

[摘要]In this study, we show that systematic molecular control over a silicon-on-insulator field effect transistor (SOI-FET) device can be achieved by controlling the Si-O-Si intermolecular interactions between adjacent trichlorosilane molecules. This is attrib

 
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