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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共122条记录   Properties of vanadium and tantalum granular oxide-metal tunnel junctions fabricated by electrochemical anodization [作者：Fan, WB; Kirkwood, D; Lu, JW; Wolf, SA,期刊：Applied Physics Letters, 页码：232110-232110 , 文章类型： Article，,卷期：2009年95-23] Localized electrochemical anodization has been used to prepare lateral vanadium (V) and tantalum (Ta) tunnel junctions. Electrical transport properties of these junctions were investigated at various temperatures ranging... Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode [作者：Li, BK; Wang, MJ; Chen, KJ; Wang, JN,期刊：Applied Physics Letters, 页码：232111-232111 , 文章类型： Article，,卷期：2009年95-23] Electroluminescence (EL) from a forward biased Ni/Au-AlGaN/GaN Schottky diode was observed and studied. According to the EL spectra, which were dominated by the GaN near band edge emissions, holes were injected into the ... Explicit connection between sample geometry and Hall response [作者：Paul, O; Cornils, M,期刊：Applied Physics Letters, 页码：232112-232112 , 文章类型： Article，,卷期：2009年95-23] The linear galvanomagnetic response of four-contact devices to the presence of a magnetic field B is deduced from two normalized current densities j(a0) and j(b0) in the device under rotated biasing conditions in the abs... Observation of metal precipitates at prebreakdown sites in multicrystalline silicon solar cells [作者：Kwapil, W; Gundel, P; Schubert, MC; Heinz, FD; Warta, W; Weber, ER; Goetzberger, A; Martinez-Criado, G,期刊：Applied Physics Letters, 页码：232113-232113 , 文章类型： Article，,卷期：2009年95-23] The local prebreakdown behavior of a damage etched multicrystalline silicon solar cell produced from virgin grade feedstock was characterized. At the position of micrometer-scaled prebreakdown sites, which correlate with... Energy- and density-dependent dynamics of photoexcited carriers in InN films [作者：Fukunaga, K; Hashimoto, M; Kunugita, H; Kamimura, J; Kikuchi, A; Kishino, K; Ema, K,期刊：Applied Physics Letters, 页码：232114-232114 , 文章类型： Article，,卷期：2009年95-23] Fast and slow photocarrier dynamics in indium nitride films have been investigated using femtosecond transient measurements at room temperature. The behavior of the decay dynamics is found to be strongly dependent on the... Resonant tunneling and negative transconductance in single barrier bilayer graphene structure [作者：Nguyen, VH; Bournel, A; Nguyen, VL; Dollfus, P,期刊：Applied Physics Letters, 页码：232115-232115 , 文章类型： Article，,卷期：2009年95-23] Using the nonequilibrium Green's function method, the electronic transport in a gate-induced barrier bilayer graphene structure is investigated. Strong resonant effects are shown to result in high amplitude oscillation o... Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) [作者：Cheng, J; Aviles, T; El Akra, A; Bru-Chevallier, C; Largeau, L; Patriarche, G; Regreny, P; Benamrouche, A; Robach, Y; Hollinger, G; Saint-Girons, G,期刊：Applied Physics Letters, 页码：232116-232116 , 文章类型： Article，,卷期：2009年95-23] The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Inc... Blue electroluminescence from ZnO based heterojunction diodes with CdZnO active layers [作者：Li, L; Yang, Z; Kong, JY; Liu, JL,期刊：Applied Physics Letters, 页码：232117-232117 , 文章类型： Article，,卷期：2009年95-23] p-ZnO/i-CdZnO/n-ZnO was grown on n-type Si substrates by plasma-assisted molecular-beam epitaxy. Rectifying I-V curves show typical diode characteristics. Blue electroluminescence emissions at around 459 nm were observed... Nanomechanically induced molecular conductance switch [作者：Li, XF; Wang, LL; Chen, KQ; Luo, Y,期刊：Applied Physics Letters, 页码：232118-232118 , 文章类型： Article，,卷期：2009年95-23] A mechanical single molecular switch using specific metallic broken carbon nanotubes (BCNTs) as electrodes is designed. It can operate by simply pressing one of the electrodes mechanically with robust performance. The de... Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching [作者：Schafers, M; Drewello, V; Reiss, G; Thomas, A; Thiel, K; Eilers, G; Munzenberg, M; Schuhmann, H; Seibt, M,期刊：Applied Physics Letters, 页码：232119-232119 , 文章类型： Article，,卷期：2009年95-23] Magnetic tunnel junctions for spin-transfer torque (STT) switching are prepared to investigate the dielectric breakdown. Intact and broken tunnel junctions are characterized by transport measurements prior to transmissio... Reducing microwave loss in superconducting resonators due to trapped vortices [作者：Song, C; DeFeo, MP; Yu, K; Plourde, BLT,期刊：Applied Physics Letters, 页码：232501-232501 , 文章类型： Article，,卷期：2009年95-23] Microwave resonators with high quality factors have enabled many recent breakthroughs with superconducting qubits and photon detectors, typically operated in shielded environments to reduce the ambient magnetic field. In... Bidirectional magnetic nanowire shift register [作者：O'Brien, L; Read, DE; Zeng, HT; Lewis, ER; Petit, D; Cowburn, RP,期刊：Applied Physics Letters, 页码：232502-232502 , 文章类型： Article，,卷期：2009年95-23] We experimentally demonstrate a shift register based on an open-ended chain of ferromagnetic NOT gates which can support bidirectional data flow. Up to eight data bits are electrically input to the device, stored for ext... Direct-current effects on magnetization reversal properties of submicron-size Permalloy patterns for radio-frequency devices [作者：Zhang, HQ; Hoffmann, A; Divan, R; Wang, PS,期刊：Applied Physics Letters, 页码：232503-232503 , 文章类型： Article，,卷期：2009年95-23] Ferromagnetic resonance (FMR) spectroscopy is used to measure direct-current (dc) effects on the magnetization reversal properties of submicron-sized lateral patterned magnetic material. The observed FMR frequency-field ... Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires [作者：Fukami, S; Nakatani, Y; Suzuki, T; Nagahara, K; Ohshima, N; Ishiwata, N,期刊：Applied Physics Letters, 页码：232504-232504 , 文章类型： Article，,卷期：2009年95-23] We investigated the relation between critical current of domain wall motion and wire dimension by using perpendicularly magnetized Co/Ni nanowires with different widths and thicknesses. The critical current, I-c, became ... Coercivity tuning in Co/Pd multilayer based bit patterned media [作者：Hellwig, O; Hauet, T; Thomson, T; Dobisz, E; Risner-Jamtgaard, JD; Yaney, D; Terris, BD; Fullerton, EE,期刊：Applied Physics Letters, 页码：232505-232505 , 文章类型： Article，,卷期：2009年95-23] In order to adjust the reversal field of high anisotropy [Co(2.8 angstrom/Pd(9 angstrom)](8) bit patterned media (BPM), one may increase the individual Co thickness to change the overall anisotropy or alternatively combi... In situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N-2 atmosphere [作者：Talut, G; Grenzer, J; Reuther, H; Shalimov, A; Baehtz, C; Novikov, D; Walz, B,期刊：Applied Physics Letters, 页码：232506-232506 , 文章类型： Article，,卷期：2009年95-23] The formation of secondary phases in Fe implanted GaN upon annealing in low pressure N-2-atmosphere was detected by means of in situ x-ray diffraction and confirmed by magnetization measurements. A repeatable phase chang...