Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

[摘要]：The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to th

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