Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

[摘要]：Electroluminescence (EL) from a forward biased Ni/Au-AlGaN/GaN Schottky diode was observed and studied. According to the EL spectra, which were dominated by the GaN near band edge emissions, holes were injected into the GaN layer. It was found that the tu

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