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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共91条记录   Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels [作者：Matulionis, A; Liberis, J; Matulioniene, I; Ramonas, M; Sermuksnis, E; Leach, JH; Wu, M; Ni, X; Li, X; Morkoc, H,期刊：Applied Physics Letters, 页码：192102-192102 , 文章类型： Article，,卷期：2009年95-19] Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependen... Superconducting tunneling spectroscopy of a carbon nanotube quantum dot [作者：Dirks, T; Chen, YF; Birge, NO; Mason, N,期刊：Applied Physics Letters, 页码：192103-192103 , 文章类型： Article，,卷期：2009年95-19] We report results on superconducting tunneling spectroscopy of a carbon nanotube quantum dot. Using a three-probe technique that includes it Superconducting tunnel probe. we map out changes in conductance due to band str... Highly efficient (Cs8V) superatom-based spin-polarizer [作者：He, HY; Pandey, R; Reveles, JU; Khanna, SN; Karna, SP,期刊：Applied Physics Letters, 页码：192104-192104 , 文章类型： Article，,卷期：2009年95-19] Quantum transport through Molecules and the possibility to manipulate spin has generated tremendous excitement. Here, we demonstrate unusual spin transport through a molecule of two Cs8V magnetic superatoms. Calculations... Undoped vacuum annealed In2O3 thin films as a transparent conducting oxide [作者：Dixit, A; Sudakar, C; Naik, R; Naik, VM; Lawes, G,期刊：Applied Physics Letters, 页码：192105-192105 , 文章类型： Article，,卷期：2009年95-19] We have investigated the structural, optical. and electrical properties of both as-grown and vacuum annealed In2O3 thin films. In contrast to the insulating as-prepared samples, vacuum annealed In2O3 films exhibit it met... Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO [作者：Tang, K; Gu, SL; Zhu, SM; Liu, JG; Chen, H; Ye, JD; Zhang, R; Zheng, YD,期刊：Applied Physics Letters, 页码：192106-192106 , 文章类型： Article，,卷期：2009年95-19] In this letter, the authors performed a comprehensive study oil suppression mechanism of compensation from nitrogen and carbon related complex defects in N-doped ZnO grown by metal-organic chemical vapor deposition The c... Anisotropic electron spin relaxation in bulk GaN [作者：Buss, JH; Rudolph, J; Natali, F; Semond, F; Hagele, D,期刊：Applied Physics Letters, 页码：192107-192107 , 文章类型： Article，,卷期：2009年95-19] Electron spin dynamics in n-type c-oriented wurtzite GaN epilayers is studied by time-resolved Kerr-rotation measurements at T=80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is app... Cu-Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol [作者：Tan, CS; Lim, DF; Singh, SG; Goulet, SK; Bergkvist, M,期刊：Applied Physics Letters, 页码：192108-192108 , 文章类型： Article，,卷期：2009年95-19] Self-assembled monolayer (SAM) of 1-hexanethiol is applied on copper (Cu) surface to retard surface oxidation during exposure in the ambient. This SAM layer can be desorbed effectively with an annealing step in inert N-2... Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy [作者：Fang, LWW; Zhao, R; Pan, JS; Zhang, Z; Shi, LP; Chong, TC; Yeo, YC,期刊：Applied Physics Letters, 页码：192109-192109 , 文章类型： Article，,卷期：2009年95-19] The metal/alpha-Ge2Sb2Te5 interface was examined using x-ray photoelectron spectroscopy. Doping Ge2Sb2Te5 with nitrogen leads to an increase in hole barrier height at the interface between metals and nitrogen-doped Ge2Sb... Multichannel carbon nanotube field-effect transistors with compound channel layer [作者：Chen, CX; Zhang, W; Zhang, YF,期刊：Applied Physics Letters, 页码：192110-192110 , 文章类型： Article，,卷期：2009年95-19] A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as pri... Sulfur passivation of InN surface electron accumulation [作者：Bailey, LR; Veal, TD; Kendrick, CE; Durbin, SM; McConville, CF,期刊：Applied Physics Letters, 页码：192111-192111 , 文章类型： Article，,卷期：2009年95-19] The effects of treatment with ammonium sulfide ((NH4)(2)S-x) solution on the electronic properties of InN surfaces have been investigated with high resolution x-ray photoemission spectroscopy. The valence band, In 3d, an... g-factor and exchange energy in a few-electron lateral InGaAs quantum dot [作者：Larsson, M; Nilsson, HA; Hardtdegen, H; Xu, HQ,期刊：Applied Physics Letters, 页码：192112-192112 , 文章类型： Article，,卷期：2009年95-19] We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electr...