Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy

[摘要]：The metal/alpha-Ge2Sb2Te5 interface was examined using x-ray photoelectron spectroscopy. Doping Ge2Sb2Te5 with nitrogen leads to an increase in hole barrier height at the interface between metals and nitrogen-doped Ge2Sb2Te5. Hole barrier height at metal/

[全文传递流程]：

一般上传文献全文的时限在1个工作日内