- Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer - art. no. 251905
[作者:Aggarwal, R; Jin, CM; Pant, P; Narayan, J; Narayan, RJ,期刊:Applied Physics Letters, 页码:51905-51905 , 文章类型: Article,,卷期:2008年93-25]
- In this work, an approach for integrating zinc oxide thin films with Si(100) substrates using an epitaxial tetragonal yttria-stabilized zirconia buffer layer is reported. Selected area electron diffraction measurements r...
- Epitaxial growth of GaN films grown on single crystal Fe substrates - art. no. 251906
[作者:Okamoto, K; Inoue, S; Matsuki, N; Kim, TW; Ohta, J; Oshima, M; Fujioka, H; Ishii, A,期刊:Applied Physics Letters, 页码:51906-51906 , 文章类型: Article,,卷期:2008年93-25]
- GaN films have been grown on single crystalline Fe(110), Fe(100), and Fe(111) substrates with low-temperature AlN buffer layers by the use of pulsed laser deposition. AlN films with 30 degrees rotated domains and polycry...
- Viscoelastic mechanical behavior of soft microcantilever-based force sensors - art. no. 251907
[作者:Lin, IK; Liao, YM; Liu, Y; Ou, KS; Chen, KS; Zhang, X,期刊:Applied Physics Letters, 页码:51907-51907 , 文章类型: Article,,卷期:2008年93-25]
- Polydimethylsiloxane (PDMS) microcantilevers have been used as force sensors for studying cellular mechanics by converting their displacements to cellular mechanical forces. However, PDMS is an inherently viscoelastic ma...
- Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films - art. no. 252102
[作者:Lee, SB; Chae, SC; Chang, SH; Lee, JS; Park, S; Jo, Y; Seo, S; Kahng, B; Noh, TW,期刊:Applied Physics Letters, 页码:52102-52102 , 文章类型: Article,,卷期:2008年93-25]
- We investigated third harmonic generation in NiO thin films that exhibit unipolar resistance switching. We found that low resistance states (LRSs) were strongly nonlinear with variations in the resistance R as large as 6...
- Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape - art. no. 252103
[作者:Lim, W; Douglas, EA; Kim, SH; Norton, DP; Pearton, SJ; Ren, F; Shen, H; Chang, WH,期刊:Applied Physics Letters, 页码:52103-52103 , 文章类型: Article,,卷期:2008年93-25]
- Amorphous (alpha-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (< 100 degrees C). The alpha-InGaZnO4 films with an n-type carrier concentration of similar to 10(16...
- Bipolar charge transport in poly(3-hexyl thiophene)/methanofullerene blends: A ratio dependent study - art. no. 252104
[作者:Baumann, A; Lorrmann, J; Deibel, C; Dyakonov, V,期刊:Applied Physics Letters, 页码:52104-52104 , 文章类型: Article,,卷期:2008年93-25]
- We investigated the charge carrier mobility in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C-61 butyric acid methyl ester (PCBM) blend devices by applying the time resolved photoconductivity experiment ...
- Effects of high-temperature annealing on the optical phonons and nitrogen local vibrational modes in GaAs1-xNx epilayers - art. no. 252105
[作者:Coaquira, JAH; Teixeira, JF; da Silva, SW; Morais, PC; Fotkatzikis, A; Freundlich, A,期刊:Applied Physics Letters, 页码:52105-52105 , 文章类型: Article,,卷期:2008年93-25]
- Effects of high-temperature annealing on the vibrational properties of strained GaAs1-xNx/GaAs epilayers with x <= 0.037 have been studied by room-temperature backscattering Raman measurements. The reduction in the linea...
- Electron coherence length and mobility in highly mismatched III-N-V alloys - art. no. 252106
[作者:Patane, A; Allison, G; Eaves, L; Kozlova, NV; Zhuang, QD; Krier, A; Hopkinson, M; Hill, G,期刊:Applied Physics Letters, 页码:52106-52106 , 文章类型: Article,,卷期:2008年93-25]
- We investigate the quantum coherence length, L-phi, and mobility of conduction electrons in the dilute nitride alloy GaAs1-xNx. Analysis of the negative magnetoresistance using weak localization theory reveals a marked r...
- Direct evidence of spin-polarized band structure of Sb(111) surface - art. no. 252107
[作者:Kadono, T; Miyamoto, K; Nishimura, R; Kanomaru, K; Qiao, S; Shimada, K; Namatame, H; Kimura, A; Taniguchi, M,期刊:Applied Physics Letters, 页码:52107-52107 , 文章类型: Article,,卷期:2008年93-25]
- We have directly characterized the spin-polarized energy-band structures of Sb(111) near the Fermi level by spin- and angle-resolved photoemission spectroscopy. The results clearly indicate that the energy bands are spin...
- High temperature electrical resistance of substrate-supported single walled carbon nanotubes - art. no. 252108
[作者:Avedisian, CT; Cavicchi, RE; McEuen, PM; Zhou, XJ; Hurst, WS; Hodges, JT,期刊:Applied Physics Letters, 页码:52108-52108 , 文章类型: Article,,卷期:2008年93-25]
- We report the electrical characteristics of substrate-supported metallic single walled carbon nanotubes at temperatures up to 573 K over a range of bias voltages (V-b) for zero gate voltage in air under atmospheric press...
- Electrical-modulated magnetoresistance in multi-p-n heterojunctions of La0.9Sr0.1MnO3 and oxygen-vacant SrTiO3-delta on Si substrates - art. no. 252110
[作者:Zhao, K; Jin, KJ; Lu, HB; He, M; Huang, YH; Yang, GZ; Zhang, JD,期刊:Applied Physics Letters, 页码:52110-52110 , 文章类型: Article,,卷期:2008年93-25]
- The electrical modulation of the magnetoresistance (MR) from -70% to 80% under a small magnetic field of 200 Oe near room temperature is found in multi-p-n heterostructures of SrTiO3-delta/La0.9Sr0.1MnO3/SrTiO3-delta/La0...
- Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K - art. no. 252502
[作者:Fukuma, Y; Asada, H; Miyawaki, S; Koyanagi, T; Senba, S; Goto, K; Sato, H,期刊:Applied Physics Letters, 页码:52502-52502 , 文章类型: Article,,卷期:2008年93-25]
- IV-VI diluted magnetic semiconductor Ge0.92Mn0.08Te epilayers are grown on BaF2 substrates by molecular beam epitaxy. The ferromagnetic behaviors, such as the spontaneous magnetization, the coercive field, and the Curie ...
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