Effects of high-temperature annealing on the optical phonons and nitrogen local vibrational modes in GaAs1-xNx epilayers - art. no. 252105

[摘要]：Effects of high-temperature annealing on the vibrational properties of strained GaAs1-xNx/GaAs epilayers with x <= 0.037 have been studied by room-temperature backscattering Raman measurements. The reduction in the linear redshift of the LO1 line after th

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