Electrical-modulated magnetoresistance in multi-p-n heterojunctions of La0.9Sr0.1MnO3 and oxygen-vacant SrTiO3-delta on Si substrates - art. no. 252110

[摘要]：The electrical modulation of the magnetoresistance (MR) from -70% to 80% under a small magnetic field of 200 Oe near room temperature is found in multi-p-n heterostructures of SrTiO3-delta/La0.9Sr0.1MnO3/SrTiO3-delta/La0.9Sr0.1MnO3/Si we fabricated. The m

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