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  • Phase change memory technology
    [作者:Burr, GW; Breitwisch, MJ; Franceschini, M; Garetto, D; Gopalakrishnan, K; Jackson, B; Kurdi, B; Lam, C; Lastras, LA; Padilla, A; Rajendran, B; Raoux, S; Shenoy, RS,期刊:Journal Of Vacuum Science & Technology B, 页码:223-262 , 文章类型: Review,,卷期:2010年28-2]
  • The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive cryst...
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