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Phase change memory technology

  作者 Burr, GW; Breitwisch, MJ; Franceschini, M; Garetto, D; Gopalakrishnan, K; Jackson, B; Kurdi, B; Lam, C; Lastras, LA; Padilla, A; Rajendran, B; Raoux, S; Shenoy, RS  
  选自 期刊  Journal Of Vacuum Science & Technology B;  卷期  2010年28-2;  页码  223-262  
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[摘要]The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase ch

 
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