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  • An Anisotropic Etching Effect in the Graphene Basal Plane
    [作者:Yang, R; Zhang, LC; Wang, Y; Shi, ZW; Shi, DX; Gao, HJ; Wang, EG; Zhang, GY,期刊:ADVANCED MATERIALS, 页码:4014-4019 , 文章类型: Article,,卷期:2010年22-36]
  • A highly controllable, dry, anisotropic etching technique for graphene sheets has been achieved using hydrogen plasma etching. Zigzag edge formation was achieved by starting the etching at edges and defects and depends s...
  • Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
    [作者:Yang, JJ; Strachan, JP; Xia, QF; Ohlberg, DAA; Kuekes, PJ; Kelley, RD; Stickle, WF; Stewart, DR; Medeiros-Ribeiro, G; Williams, RS,期刊:ADVANCED MATERIALS, 页码:4034-4038 , 文章类型: Article,,卷期:2010年22-36]
  • Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti o...
  • Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
    [作者:Li, YY; Wang, GA; Zhu, XG; Liu, MH; Ye, C; Chen, X; Wang, YY; He, K; Wang, LL; Ma, XC; Zhang, HJ; Dai, X; Fang, Z; Xie, XC; Liu, Y; Qi, XL; Jia, JF; Zhang, SC; Xue, QK,期刊:ADVANCED MATERIALS, 页码:4002-4007 , 文章类型: Article,,卷期:2010年22-36]
  • High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological ...