- Blue light-emitting diodes with a roughened backside fabricated by wet etching
[作者:Lin, CF; Lin, CM; Chen, KT; Huang, WC; Lin, MS; Dai, JJ; Jiang, RH; Huang, YC; Chang, CY,期刊:Applied Physics Letters, 页码:201102-201102 , 文章类型: Article,,卷期:2009年95-20]
- The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser d...
- Randomly packed n-SnO2 nanorods/p-SiC heterojunction light-emitting diodes
[作者:Yang, HY; Yu, SF; Cheng, CW; Tsang, SH; Liang, HK; Fan, HJ,期刊:Applied Physics Letters, 页码:201104-201104 , 文章类型: Article,,卷期:2009年95-20]
- A layer of randomly packed n-SnO2 nanorods is grown by vapor transport method on the p-SiC(4H) substrate to realize heterojunction light-emitting diodes. Diodelike rectifying current-voltage characteristics, with a turn-...
- Electrically switchable multiple volume hologram recording in polymer-dispersed liquid-crystal films
[作者:Gao, HY; Pu, HH; Gao, B; Yin, DJ; Liu, JH; Gan, FX,期刊:Applied Physics Letters, 页码:201105-201105 , 文章类型: Article,,卷期:2009年95-20]
- Multiple Bragg hologram recording was investigated in trimethylolpropane triacrylate based polymer-dispersed liquid-crystal thin films. Ten volume holograms were stored at a single location of less than 0.8 mm(2) area wi...
- Transient optical response of quantum well excitons to intense narrowband terahertz pulses
[作者:Jameson, AD; Tomaino, JL; Lee, YS; Prineas, JP; Steiner, JT; Kira, M; Koch, SW,期刊:Applied Physics Letters, 页码:201107-201107 , 文章类型: Article,,卷期:2009年95-20]
- Intense narrowband terahertz pulses are used to modify excitonic transitions in semiconductor quantum wells and to study the dephasing properties of the optically dark 2p states. Time-resolved terahertz-pump and optical-...
- Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
[作者:Pavlov, SG; Bottger, U; Eichholz, R; Abrosimov, NV; Riemann, H; Shastin, VN; Redlich, B; Hubers, HW,期刊:Applied Physics Letters, 页码:201110-201110 , 文章类型: Article,,卷期:2009年95-20]
- Stimulated emission at terahertz frequencies (4.5-5.8 THz) has been realized by electronic Raman scattering of infrared radiation on bismuth donor centers in silicon at low temperatures. The Stokes shift of the observed ...
- Reflection-mode sensing using optical microresonators
[作者:Koch, B; Yi, YS; Zhang, JY; Znameroski, S; Smith, T,期刊:Applied Physics Letters, 页码:201111-201111 , 文章类型: Article,,卷期:2009年95-20]
- The authors present an approach for applying optical microring resonators to sensing. The approach relies on the interaction of the resonator with a nanoparticle taggant, which can induce coupling between forward and bac...
- On carrier spillover in c- and m-plane InGaN light emitting diodes
[作者:Lee, J; Li, X; Ni, X; Ozgur, U; Morkoc, H; Paskova, T; Mulholland, G; Evans, KR,期刊:Applied Physics Letters, 页码:201113-201113 , 文章类型: Article,,卷期:2009年95-20]
- The internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) in InGaN light-emitting diodes (LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane Ga...
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