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On carrier spillover in c- and m-plane InGaN light emitting diodes

作者	Lee, J; Li, X; Ni, X; Ozgur, U; Morkoc, H; Paskova, T; Mulholland, G; Evans, KR

选自	期刊 Applied Physics Letters; 卷期 2009年95-20; 页码 201113-201113

关联知识点

[摘要]：The internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) in InGaN light-emitting diodes (LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane GaN were investigated in order to she
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