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Blue light-emitting diodes with a roughened backside fabricated by wet etching

  作者 Lin, CF; Lin, CM; Chen, KT; Huang, WC; Lin, MS; Dai, JJ; Jiang, RH; Huang, YC; Chang, CY  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-20;  页码  201102-201102  
  关联知识点  
 

[摘要]The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a

 
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