个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共83条记录   Silicon electronics on silk as a path to bioresorbable, implantable devices (vol 95, 133701, 2009) [作者：Kim, DH; Kim, YS; Amsden, J; Panilaitis, B; Kaplan, DL; Omenetto, FG; Zakin, MR; Rogers, JA,期刊：Applied Physics Letters, 页码：269902-269902 , 文章类型： Correction，,卷期：2009年95-26] Design of one-dimensional optical pulse-shaping filters by time-domain topology optimization [作者：Yang, LR; Lavrinenko, AV; Hvam, JM; Sigmund, O,期刊：Applied Physics Letters, 页码：261101-261101 , 文章类型： Article，,卷期：2009年95-26] Time-domain topology optimization is used here to design optical pulse-shaping filters in Si/SiO2 thin-film systems. A novel envelope objective function as well as explicit penalization are used to adapt the optimization... Polychromatic beam splitting by fractional stimulated Raman adiabatic passage [作者：Dreisow, F; Ornigotti, M; Szameit, A; Heinrich, M; Keil, R; Nolte, S; Tunnermann, A; Longhi, S,期刊：Applied Physics Letters, 页码：261102-261102 , 文章类型： Article，,卷期：2009年95-26] We propose and demonstrate a femtosecond laser inscribed micro-optical device for broadband beam splitting based on the interruption of the stimulated Raman adiabatic passage. For the spectral characterization waveguide ... Performance of hybrid entanglement photon pair source for quantum key distribution [作者：Fujiwara, M; Toyoshima, M; Sasaki, M; Yoshino, K; Nambu, Y; Tomita, A,期刊：Applied Physics Letters, 页码：261103-261103 , 文章类型： Article，,卷期：2009年95-26] We report on the experimental demonstration of a source of hybrid entanglement pairs between two different degrees of freedom, a 1550 nm time-bin qubit and an 810 nm polarization qubit. The polarization qubit at 810 nm i... NaSb3F10: A new second-order nonlinear optical crystal to be used in the IR region with very high laser damage threshod [作者：Zhang, G; Qin, JG; Liu, T; Li, YJ; Wu, YC; Chen, CT,期刊：Applied Physics Letters, 页码：261104-261104 , 文章类型： Article，,卷期：2009年95-26] This paper reports the second-order nonlinear optical (NLO) property of NaSb3F10, a potential new NLO material in the infrared region. The compound exhibits a phase-matchable second harmonic generation (SHG) efficiency o... High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide [作者：Feng, DZ; Liao, SR; Dong, P; Feng, NN; Liang, H; Zheng, DW; Kung, CC; Fong, J; Shafiiha, R; Cunningham, J; Krishnamoorthy, AV; Asghari, M,期刊：Applied Physics Letters, 页码：261105-261105 , 文章类型： Article，,卷期：2009年95-26] We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable... Resistance to edge recombination in GaAs-based dots-in-a-well solar cells [作者：Gu, TY; El-Emawy, MA; Yang, K; Stintz, A; Lester, LF,期刊：Applied Physics Letters, 页码：261106-261106 , 文章类型： Article，,卷期：2009年95-26] Insensitivity to edge recombination is observed in GaAs-based InAs/InGaAs quantum dots-in-a-well (DWELL) solar cells by comparing its current-voltage (IV) plot to GaAs control samples. The edge recombination current comp... Generation and recombination rates at ZnTe:O intermediate band states [作者：Wang, WM; Lin, AS; Phillips, JD; Metzger, WK,期刊：Applied Physics Letters, 页码：261107-261107 , 文章类型： Article，,卷期：2009年95-26] Carrier generation and recombination processes of ZnTeO thin films are studied by time-resolved photoluminescence, where carrier lifetimes at oxygen states and the conduction band are inferred to be >1 mu s and < 100 ps,... Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes [作者：Perlin, P; Holc, K; Sarzynski, M; Scheibenzuber, W; Marona, L; Czernecki, R; Leszczynski, M; Bockowski, M; Grzegory, I; Porowski, S; Cywinski, G; Firek, P; Szmidt, J; Schwarz, U; Suski, T,期刊：Applied Physics Letters, 页码：261108-261108 , 文章类型： Article，,卷期：2009年95-26] We demonstrate an InGaN laser diode, in which the waveguiding quality of the device is improved by the introduction of highly doped (plasmonic) layer constituting an upper part of the GaN substrate. Thanks to this, we we... Holographic assembly of semiconductor CdSe quantum dots in polymer for volume Bragg grating structures with diffraction efficiency near 100% [作者：Liu, XM; Tomita, Y; Oshima, J; Chikama, K; Matsubara, K; Nakashima, T; Kawai, T,期刊：Applied Physics Letters, 页码：261109-261109 , 文章类型： Article，,卷期：2009年95-26] We report on the fabrication of centimeter-size transmission Bragg gratings in semiconductor CdSe quantum dots dispersed 50 mu m thick photopolymer films. This was done by holographic assembly of CdSe quantum dots in a p... Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting [作者：Zhang, L; Teng, JH; Chua, SJ; Fitzgerald, EA,期刊：Applied Physics Letters, 页码：261110-261110 , 文章类型： Article，,卷期：2009年95-26] Surface emitting linearly polarized InGaN/GaN light emitting diode (LED) is demonstrated using a subwavelength metallic nanograting. The aluminum based grating with a period of 150 nm is fabricated on top of the p-contac... Strong enhancement of Raman-induced nonreciprocity in silicon waveguides by alignment with the crystallographic axes [作者：Krause, M; Renner, H; Brinkmeyer, E,期刊：Applied Physics Letters, 页码：261111-261111 , 文章类型： Article，,卷期：2009年95-26] Raman gain in silicon photonic wires depends on the relative propagation directions of the pump and Stokes waves due to strong longitudinal mode-field components. Here we show that this Raman-induced nonreciprocity can b... Fast reaction mechanism of a core(Al)-shell (Al2O3) nanoparticle in oxygen [作者：Wang, WQ; Clark, R; Nakano, A; Kalia, RK; Vashishta, P,期刊：Applied Physics Letters, 页码：261901-261901 , 文章类型： Article，,卷期：2009年95-26] Atomistic mechanisms of oxidation in a laser flash heated core (Aluminum)-shell (Alumina) nanoparticle are investigated using multimillion-atom molecular dynamics simulations. We find a thermal-to-mechanochemical transit... The effect of environment on the radial breathing mode of supergrowth single wall carbon nanotubes [作者：Araujo, PT; Fantini, C; Lucchese, MM; Dresselhaus, MS; Jorio, A,期刊：Applied Physics Letters, 页码：261902-261902 , 文章类型： Article，,卷期：2009年95-26] It has been shown that "supergrowth" single wall carbon nanotubes (SWNTs) exhibit a radial breathing mode frequency omega(RBM) dependence on tube diameter d(t) given by omega(RBM)=227/d(t). This result gave rise to two d... Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film [作者：Cho, DY; Kim, JH; Na, KD; Song, J; Hwang, CS; Park, BG; Kim, JY; Min, CH; Oh, SJ,期刊：Applied Physics Letters, 页码：261903-261903 , 文章类型： Article，,卷期：2009年95-26] The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L-3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a-ZnO and a wurtzite ZnO (w-Zn... Electrical and optical properties of p-type InGaN [作者：Pantha, BN; Sedhain, A; Li, J; Lin, JY; Jiang, HX,期刊：Applied Physics Letters, 页码：261904-261904 , 文章类型： Article，,卷期：2009年95-26] Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. ...