Resistance to edge recombination in GaAs-based dots-in-a-well solar cells

[摘要]：Insensitivity to edge recombination is observed in GaAs-based InAs/InGaAs quantum dots-in-a-well (DWELL) solar cells by comparing its current-voltage (IV) plot to GaAs control samples. The edge recombination current component is extracted by analyzing dev

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