Electrical and optical properties of p-type InGaN

[摘要]：Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (E-A) as a funct

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