- Quantized charge pumping through a carbon nanotube double quantum dot
[作者:Chorley, SJ; Frake, J; Smith, CG; Jones, GAC; Buitelaar, MR,期刊:Applied Physics Letters, 页码:143104-143104 , 文章类型: Article,,卷期:2012年100-14]
- We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots, we move the system around charge triple points and transport ...
- Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3
[作者:Chou, HY; O'Connor, E; Hurley, PK; Afanas'ev, VV; Houssa, M; Stesmans, A; Ye, PD; Newcomb, SB,期刊:Applied Physics Letters, 页码:141602-141602 , 文章类型: Article,,卷期:2012年100-14]
- Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A ...
- Omnidirectional broadband acoustic absorber based on metamaterials
[作者:Climente, A; Torrent, D; Sanchez-Dehesa, J,期刊:Applied Physics Letters, 页码:144103-144103 , 文章类型: Article,,卷期:2012年100-14]
- We present the design, construction, and experimental characterization of the acoustic analogue of the so called photonic black-hole. The fabricated sample has cylindrical symmetry and consists of two parts, a shell that...
- Double layer capacitance measured by organic field effect transistor operated in water
[作者:Cramer, T; Kyndiah, A; Murgia, M; Leonardi, F; Casalini, S; Biscarini, F,期刊:Applied Physics Letters, 页码:143302-143302 , 文章类型: Article,,卷期:2012年100-14]
- Pentacene ultra thin film transistors were exposed to water and operated with a conventional silicon/silicon oxide bottom gate and an electrolyte top gate controlled by a working electrode. The transistors are highly sen...
- Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
[作者:De Stefano, F; Houssa, M; Kittl, JA; Jurczak, M; Afanas'ev, VV; Stesmans, A,期刊:Applied Physics Letters, 页码:142102-142102 , 文章类型: Article,,卷期:2012年100-14]
- The conduction mechanisms and nature of the filament formed in the low resistive state of TiN/HfO2/TiN resistive random access memories are studied from the temperature-dependence of their current-voltage characteristics...
- Fluorinated copper-phthalocyanine/cobalt-phthalocyaine organic heterojunctions: Charge transport and Kelvin probe studies
[作者:Debnath, AK; Kumar, A; Samanta, S; Prasad, R; Singh, A; Chauhan, AK; Veerender, P; Singh, S; Basu, S; Aswal, DK; Gupta, SK,期刊:Applied Physics Letters, 页码:142104-142104 , 文章类型: Article,,卷期:2012年100-14]
- Organic heterojunctions comprising of n-type fluorinated copper-phthalocyanine (F16CuPc) and p-type cobalt-phthalocyanine (CoPc) layers were prepared on (001) LaAlO3 substrates. In the entire temperature range of 300-30 ...
- Vibrational frequencies of anti-diabetic drug studied by terahertz time-domain spectroscopy
[作者:Du, SQ; Li, H; Xie, L; Chen, L; Peng, Y; Zhu, YM; Li, H; Dong, P; Wang, JT,期刊:Applied Physics Letters, 页码:143702-143702 , 文章类型: Article,,卷期:2012年100-14]
- By using terahertz time-domain spectroscopy, the absorption spectra of seven anti-diabetic pills have been investigated. For gliquidone, glipizide, gliclazide, and glimepiride, an obvious resonance peak is found at 1.37 ...
- Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes
[作者:Ebrish, MA; Shao, H; Koester, SJ,期刊:Applied Physics Letters, 页码:143102-143102 , 文章类型: Article,,卷期:2012年100-14]
- The operation of multi-finger graphene quantum capacitance varactors fabricated using a planarized local bottom gate electrode, HfO2 gate dielectric, and large-area graphene is described. As a function of the gate bias, ...
- Low frequency noise in La0.7Sr0.3MnO3 based magnetic tunnel junctions
[作者:Guerrero, R; Solignac, A; Fermon, C; Pannetier-Lecoeur, M; Lecoeur, P; Fernandez-Pacheco, R,期刊:Applied Physics Letters, 页码:142402-142402 , 文章类型: Article,,卷期:2012年100-14]
- Magnetic tunnel junctions based on manganites can exhibit a high tunneling magnetoresistance ratio due to the almost full spin polarization at the Fermi level. However, the performances of magnetic tunnel junction device...
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