个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共86条记录   Obvious efficiency enhancement of organic light-emitting diodes by parylene-N buffer layer [作者：Hu, YM; He, Y; Chen, XQ; Zhan, YQ; Sun, ZY; You, YT; Hou, XY,期刊：Applied Physics Letters, 页码：163303-163303 , 文章类型： Article，,卷期：2012年100-16] A parylene-N (PPXN) buffer layer inserted between anode and organic layers in typical organic light-emitting diodes (OLEDs) based on N, N'-bis(naphthalene-1-yl)-N, N'-bis(phenyl) benzidine (NPB) and tris (8-hydroxyquinol... Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells [作者：Hu, YL; Farrell, RM; Neufeld, CJ; Iza, M; Cruz, SC; Pfaff, N; Simeonov, D; Keller, S; Nakamura, S; DenBaars, SP; Mishra, UK; Speck, JS,期刊：Applied Physics Letters, 页码：161101-161101 , 文章类型： Article，,卷期：2012年100-16] A two-step GaN barrier growth methodology was developed for InxGa1-xN/GaN multiple quantum well solar cells in which a lower temperature GaN cap layer was grown on top of the quantum wells (QWs) and then followed by a hi... Mid-wave infrared HgCdTe nBn photodetector [作者：Itsuno, AM; Phillips, JD; Velicu, S,期刊：Applied Physics Letters, 页码：161102-161102 , 文章类型： Article，,卷期：2012年100-16] A unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated. Planar mid-wave infrared (MWIR) nBn devices exhibit current-voltage (I-V) characteri... Spectroscopic ellipsometry of split ring resonators at infrared frequencies [作者：Jakovljevic, MM; Isic, G; Vasic, B; Oates, TWH; Hinrichs, K; Bergmair, I; Hingerl, K; Gajic, R,期刊：Applied Physics Letters, 页码：161105-161105 , 文章类型： Article，,卷期：2012年100-16] Using spectroscopic ellipsometry, we have determined the plasmonic resonances of split-ring resonator arrays. The features in the ellipsometric spectra were explained by the analysis of calculated polarized complex refle... Negative normal stress differences in graphene/polycarbonate composites [作者：Jun, SI; Lee, HS,期刊：Applied Physics Letters, 页码：164108-164108 , 文章类型： Article，,卷期：2012年100-16] We measured the negative normal stress differences in graphene (0.5 wt. %)/polycarbonate composites during shear flow. The Peclet number in graphene/PC melt is estimated to be 10(5) similar to 10(8), indicating the graph... Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors [作者：Kang, TK,期刊：Applied Physics Letters, 页码：163501-163501 , 文章类型： Article，,卷期：2012年100-16] Experimental evidence for the giant piezoresistance (PZR) effect in n-type silicon nanowires (SiNWs) on silicon-on-insulator wafers, also called SiNW field-effect transistors (SiNWFETs), is demonstrated. While an externa...