[摘要]：A two-step GaN barrier growth methodology was developed for InxGa1-xN/GaN multiple quantum well solar cells in which a lower temperature GaN cap layer was grown on top of the quantum wells (QWs) and then followed by a higher temperature GaN barrier layer. The performance of the solar cells improved markedly by increasing the low temperature GaN cap layer thickness from 1.5 to 3.0 nm. High-angle annular dark field scanning transmission electron microscopy and atom probe tomography measurements showed that increasing the GaN cap layer thickness improved the uniformity and increased the average indium content of the QWs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704189]
