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  • Band bending and surface defects in beta-Ga2O3
    [作者:Lovejoy, TC; Chen, RY; Zheng, X; Villora, EG; Shimamura, K; Yoshikawa, H; Yamashita, Y; Ueda, S; Kobayashi, K; Dunham, ST; Ohuchi, FS; Olmstead, MA,期刊:Applied Physics Letters, 页码:181602-181602 , 文章类型: Article,,卷期:2012年100-18]
  • Surface band bending and surface defects on the UV-transparent conducting oxide beta-Ga2O3 (100) are studied with hard x-ray photoemission spectroscopy and scanning tunneling microscopy. Highly doped beta-Ga2O3 shows fla...