[摘要]：Surface band bending and surface defects on the UV-transparent conducting oxide beta-Ga2O3 (100) are studied with hard x-ray photoemission spectroscopy and scanning tunneling microscopy. Highly doped beta-Ga2O3 shows flat bands near the surface, while the bands on nominally undoped (but still n-type), air-cleaved beta-Ga2O3 are bent upwards by greater than or similar to 0.5 eV. Negatively charged surface defects are observed on vacuum annealed beta-Ga2O3, which also shows upward band bending. Density functional calculations show oxygen vacancies are not likely to be ionized in the bulk, but could be activated by surface band bending. The large band bending may also hinder formation of ohmic contacts. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711014]
