- Properties of InxGa1-xN films in terahertz range - art. no. 071913
[作者:Gauthier-Brun, A; Teng, JH; Dogheche, E; Liu, W; Gokarna, A; Tonouchi, M; Chua, SJ; Decoster, D,期刊:Applied Physics Letters, 页码:71913-71913 , 文章类型: Article,,卷期:2012年100-7]
- In this letter, we report the characterization of the refractive indices and complex conductivities of a set of GaN films with different carrier concentrations, InN film, and InxGa1-xN films with indium content varying f...
- Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications - art. no. 072902
[作者:Ito, T; Mitani, Y; Nakasaki, Y; Koike, M; Konno, T; Matsuba, H; Kai, T; Kaneko, W; Ozawa, Y,期刊:Applied Physics Letters, 页码:72902-72902 , 文章类型: Article,,卷期:2012年100-7]
- Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is e...
- Intrinsic electroresistance of Sm0.60Sr0.40MnO3 and Sm0.55Sr0.45MnO3 - art. no. 072404
[作者:Mahmud, ST; Saber, MM; Alagoz, HS; Bouveyron, R; Jung, J; Chow, KH,期刊:Applied Physics Letters, 页码:72404-72404 , 文章类型: Article,,卷期:2012年100-7]
- We report investigations of the intrinsic electroresistance of polycrystalline Sm0.60Sr0.40MnO3 and Sm0.55Sr0.45MnO3 that are synthesized in the same way. These experiments were carried out with excitation using short cu...
- Quasimonoenergetic electron beams from laser wakefield acceleration in pure nitrogen - art. no. 074101
[作者:Mo, MZ; Ali, A; Fourmaux, S; Lassonde, P; Kieffer, JC; Fedosejevs, R,期刊:Applied Physics Letters, 页码:74101-74101 , 文章类型: Article,,卷期:2012年100-7]
- Quasimonoenergetic electron beams with maximum energy > 0.5 GeV and 2 mrad divergence have been generated in pure nitrogen gas via wakefield acceleration with 80 TW, 30 fs laser pulses. Long low energy tail features were...
- Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range - art. no. 071107
[作者:Pulka, J; Piwonski, T; Huyet, G; Houlihan, J; Semenova, E; Lematre, A; Merghem, K; Martinez, A; Ramdane, A,期刊:Applied Physics Letters, 页码:71107-71107 , 文章类型: Article,,卷期:2012年100-7]
- The ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, gr...
- Electrically switchable random to photonic band-edge laser emission in chiral nematic liquid crystals - art. no. 071110
[作者:Morris, SM; Gardiner, DJ; Hands, PJW; Qasim, MM; Wilkinson, TD; White, IH; Coles, HJ,期刊:Applied Physics Letters, 页码:71110-71110 , 文章类型: Article,,卷期:2012年100-7]
- Using a chiral nematic liquid crystal with a negative dielectric anisotropy, it is possible to switch between band-edge laser emission and random laser emission with an electric field. At low frequencies (<1 kHz), random...
- Electrode band structure effects in thin MgO magnetic tunnel junctions - art. no. 072406
[作者:Teixeira, JM; Ventura, J; Fernandez-Garcia, MP; Araujo, JP; Sousa, JB; Wisniowski, P; Freitas, PP,期刊:Applied Physics Letters, 页码:72406-72406 , 文章类型: Article,,卷期:2012年100-7]
- In this study, we demonstrate that, beyond the standard magnon excitations, the electronic band structure of the electrodes plays a significant role on the low bias voltage window (0 < vertical bar V vertical bar < 0.4 V...
- Electron mobility determination of efficient phosphorescent iridium complexes with tetraphenylimidodiphosphinate ligand via transient electroluminescence method - art. no. 073303
[作者:Teng, MY; Zhang, S; Jiang, SW; Yang, X; Lin, C; Zheng, YX; Wang, LY; Wu, D; Zuo, JL; You, XZ,期刊:Applied Physics Letters, 页码:73303-73303 , 文章类型: Article,,卷期:2012年100-7]
- The electron mobility of Alq(3) and iridium complexes was determined via transient electroluminescence (EL) method based on ITO (indium tin oxide)/di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane/complex/LiF/Al with short an...
- Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold - art. no. 073305
[作者:Dawidczyk, TJ; Johns, GL; Ozgun, R; Alley, O; Andreou, AG; Markovic, N; Katz, HE,期刊:Applied Physics Letters, 页码:73305-73305 , 文章类型: Article,,卷期:2012年100-7]
- Charge carriers trapped in polystyrene (PS) were investigated with Kelvin probe microscopy (KPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using KPM, effectiv...
|