Properties of InxGa1-xN films in terahertz range - art. no. 071913

[摘要]：In this letter, we report the characterization of the refractive indices and complex conductivities of a set of GaN films with different carrier concentrations, InN film, and InxGa1-xN films with indium content varying from x = 0.07 to x = 0.14 grown by m

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