- Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3 - art. no. 071907
[作者:Kim, Y; Chen, X; Wang, Z; Shi, J; Miotkowski, I; Chen, YP; Sharma, PA; Sharma, ALL; Hekmaty, MA; Jiang, Z; Smirnov, D,期刊:Applied Physics Letters, 页码:71907-71907 , 文章类型: Article,,卷期:2012年100-7]
- Inelastic light scattering spectra of Bi2Se3 and Sb2Te3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A(1g)(2) phonons shows similar behavior in b...
- Temperature dependent phonon Raman scattering of highly a-axis oriented CoFe2O4 inverse spinel ferromagnetic films grown by pulsed laser deposition - art. no. 071905
[作者:Liao, YY; Li, YW; Hu, ZG; Chu, JH,期刊:Applied Physics Letters, 页码:71905-71905 , 文章类型: Article,,卷期:2012年100-7]
- Lattice vibrations of highly a-axis oriented CoFe2O4 (CFO) films have been investigated by Raman scattering in the temperature range of 80-873 K. The five phonon modes T-1g(2), T-1g(3), E-g, A(1g)(1), A(1g)(2), and their...
- Temperature-dependent decay dynamics in highly mismatched ZnSe1-xTex alloy - art. no. 071912
[作者:Lin, YC; Jiang, WS; Chou, WC; Chen, WK; Chang, WH; Chia, CH; Chen, CY; Chyi, JI,期刊:Applied Physics Letters, 页码:71912-71912 , 文章类型: Article,,卷期:2012年100-7]
- This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe0.950Te0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependen...
- ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels - art. no. 073502
[作者:Kamiya, K; Yang, MY; Park, SG; Magyari-Kope, B; Nishi, Y; Niwa, M; Shiraishi, K,期刊:Applied Physics Letters, 页码:73502-73502 , 文章类型: Article,,卷期:2012年100-7]
- We study the ON-OFF switching mechanism of oxide-based resistive-random-access-memories using theoretical calculations. Electron deficient vacancies (V-O) up to 1+ charge states would stabilize a cohesive filament, while...
- Organic photovoltaic cells with nano-fabric heterojunction structure - art. no. 073301
[作者:Park, JH; Carter, AR; Mier, LM; Kao, CY; Lewis, SAM; Nandyala, RP; Min, Y; Epstein, AJ,期刊:Applied Physics Letters, 页码:73301-73301 , 文章类型: Article,,卷期:2012年100-7]
- Organic photovoltaic cells containing electron-transporting organic nanofibers in the form of "nanofabrics" are investigated. Nano-fabric heterojunctions of poly(3-hexylthiophene) and electron-transporting nanofibers sig...
- Depletion of nitrogen-vacancy color centers in diamond via hydrogen passivation - art. no. 071902
[作者:Stacey, A; Karle, TJ; McGuinness, LP; Gibson, BC; Ganesan, K; Tomljenovic-Hanic, S; Greentree, AD; Hoffman, A; Beausoleil, RG; Prawer, S,期刊:Applied Physics Letters, 页码:71902-71902 , 文章类型: Article,,卷期:2012年100-7]
- We show reduction in the emission from nitrogen-vacancy (NV) centers in single crystal diamond due to exposure to hydrogen plasmas ranging from 700 degrees C to 1000 degrees C. Significant fluorescence reduction was obse...
- High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate - art. no. 071103
[作者:Trivino, NV; Rossbach, G; Dharanipathy, U; Levrat, J; Castiglia, A; Carlin, JF; Atlasov, KA; Butte, R; Houdre, R; Grandjean, N,期刊:Applied Physics Letters, 页码:71103-71103 , 文章类型: Article,,卷期:2012年100-7]
- We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, usi...
- High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning - art. no. 071606
[作者:Jussila, H; Mattila, P; Oksanen, J; Perros, A; Riikonen, J; Bosund, M; Varpula, A; Huhtio, T; Lipsanen, H; Sopanen, M,期刊:Applied Physics Letters, 页码:71606-71606 , 文章类型: Article,,卷期:2012年100-7]
- This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level ca...
- Particle size dependent hysteresis loss in La0.7Ce0.3Fe11.6Si1.4C0.2 first-order systems - art. no. 072403
[作者:Hu, FX; Chen, L; Wang, J; Bao, LF; Sun, JR; Shen, BG,期刊:Applied Physics Letters, 页码:72403-72403 , 文章类型: Article,,卷期:2012年100-7]
- Here, we report particle size dependent hysteresis loss in La0.7Ce0.3Fe11.6Si1.4C0.2. Hysteresis loss was getting smaller with reducing the particle size. The reduced ratio can be as high as similar to 61% as the sample ...
- Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe - art. no. 071908
[作者:Zhang, TW; Ma, F; Zhang, WL; Ma, DY; Xu, KW; Chu, PK,期刊:Applied Physics Letters, 页码:71908-71908 , 文章类型: Article,,卷期:2012年100-7]
- Aluminum induced crystallization of amorphous SiGe at low temperature is studied and a dual-phase stacked structure with different compositions emerges when the annealing temperature is higher than a critical value. This...
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