【文章名】ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels - art. no. 073502
ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels - art. no. 073502
作者
Kamiya, K; Yang, MY; Park, SG; Magyari-Kope, B; Nishi, Y; Niwa, M; Shiraishi, K
[摘要]：We study the ON-OFF switching mechanism of oxide-based resistive-random-access-memories using theoretical calculations. Electron deficient vacancies (V-O) up to 1+ charge states would stabilize a cohesive filament, while further electron removal will stab
