- Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes - art. no. 051105
[作者:Hossain, N; Marko, IP; Jin, SR; Hild, K; Sweeney, SJ; Lewis, RB; Beaton, DA; Tiedje, T,期刊:Applied Physics Letters, 页码:51105-51105 , 文章类型: Article,,卷期:2012年100-5]
- We investigate the temperature and pressure dependence of the light-current characteristics and electroluminescence spectra of GaAs1-xBix/GaAs light emitting diodes. The temperature dependence of the emission wavelength ...
- Position-controlled [100] InP nanowire arrays - art. no. 053107
[作者:Wang, J; Plissard, S; Hocevar, M; Vu, TTT; Zehender, T; Immink, GGW; Verheijen, MA; Haverkort, J; Bakkers, EPAM,期刊:Applied Physics Letters, 页码:53107-53107 , 文章类型: Article,,卷期:2012年100-5]
- We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise posit...
- Time-of-flight-photoelectron emission microscopy on plasmonic structures using attosecond extreme ultraviolet pulses - art. no. 051904
[作者:Chew, SH; Sussmann, F; Spath, C; Wirth, A; Schmidt, J; Zherebtsov, S; Guggenmos, A; Oelsner, A; Weber, N; Kapaldo, J; Gliserin, A; Stockman, MI; Kling, MF; Kleineberg, U,期刊:Applied Physics Letters, 页码:51904-51904 , 文章类型: Article,,卷期:2012年100-5]
- We report on the imaging of plasmonic structures by time-of-flight-photoemission electron microscopy (ToF-PEEM) in combination with extreme ultraviolet (XUV) attosecond pulses from a high harmonic generation source. Char...
- Short circuit current improvement in planar heterojunction organic solar cells by multijunction charge transfer - art. no. 053301
[作者:Wang, JC; Shi, SQ; Leung, CW; Lau, SP; Wong, KY; Chan, PKL,期刊:Applied Physics Letters, 页码:53301-53301 , 文章类型: Article,,卷期:2012年100-5]
- A multijunction structure was applied on an organic photovoltaic (OPV) device for broadening the absorption spectrum and enhancing the power conversion efficiency through charge transfer process. By inserting the tris[4-...
- Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application - art. no. 052105
[作者:Ren, K; Rao, F; Song, ZT; Lv, SL; Cheng, Y; Wu, LC; Peng, C; Zhou, XL; Xia, MJ; Liu, B; Feng, SL,期刊:Applied Physics Letters, 页码:52105-52105 , 文章类型: Article,,卷期:2012年100-5]
- Al2Sb2Te6 is a pseudobinary material constructed by Sb2Te3 (fast crystallization speed but thermally unstable) and Al2Te3 (thermally stable but without memory switching ability). Al2Sb2Te6 material possesses advantages o...
- Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films - art. no. 053106
[作者:Prokes, SM; Glembocki, OJ; Cleveland, E; Caldwell, JD; Foos, E; Niinisto, J; Ritala, M,期刊:Applied Physics Letters, 页码:53106-53106 , 文章类型: Article,,卷期:2012年100-5]
- The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the pl...
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