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  • Selective area growth of high quality InP on Si (001) substrates
    [作者:Wang, G; Leys, MR; Loo, R; Richard, O; Bender, H; Waldron, N; Brammertz, G; Dekoster, J; Wang, W; Seefeldt, M; Caymax, M; Heyns, MM,期刊:Applied Physics Letters, 页码:121913-121913 , 文章类型: Article,,卷期:2010年97-12]
  • In this work, we demonstrate the selective area growth of high quality InP layers in submicron trenches on exactly (001) oriented Si substrates by using a thin Ge buffer layer. Antiphase domain boundaries were avoided by...
  • Flux-mediated diffuse mismatch model
    [作者:Loh, GC; Tay, BK; Teo, EHT,期刊:Applied Physics Letters, 页码:121917-121917 , 文章类型: Article,,卷期:2010年97-12]
  • The diffuse mismatch model (DMM) is modified to account for the effect of thermal flux on phonon transmission at interfaces. This new model, the flux-mediated diffuse mismatch model (FMDMM) takes a slightly different app...