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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共101条记录   Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [作者：Wang, LK; Ju, ZG; Zhang, JY; Zheng, J; Shen, DZ; Yao, B; Zhao, DX; Zhang, ZZ; Li, BH; Shan, CX,期刊：Applied Physics Letters, 页码：131113-131113 , 文章类型： Article，,卷期：2009年95-13] By employing a relatively low growth temperature and oxygen-rich conditions, single-crystalline cubic MgZnO films were prepared. A solar-blind deep ultraviolet (DUV) photodetector was finished on the MgZnO film. The maxi... Generation of extreme ultraviolet radiation with a Bessel-Gaussian beam [作者：Van Dao, L; Dinh, KB; Hannaford, P,期刊：Applied Physics Letters, 页码：131114-131114 , 文章类型： Article，,卷期：2009年95-13] The generation of few high-order harmonics in the extreme ultraviolet is enhanced by focusing the fundamental femtosecond laser beam with a combination of lens and axicon in an infinite gas cell. We show that this combin... Silver-copper alloy nanoparticles for metal enhanced luminescence [作者：Chowdhury, S; Bhethanabotla, VR; Sen, R,期刊：Applied Physics Letters, 页码：131115-131115 , 文章类型： Article，,卷期：2009年95-13] Large metal enhanced luminescence was realized at the vicinity of easily fabricated Ag-Cu alloy nanoparticles upon tuning of their surface plasmon resonance spectra by changing only one experimental variable-the annealin... 10 fs ultrafast all-optical switching in polystyrene nonlinear photonic crystals [作者：Liu, Y; Qin, F; Wei, ZY; Meng, QB; Zhang, DZ; Li, ZY,期刊：Applied Physics Letters, 页码：131116-131116 , 文章类型： Article，,卷期：2009年95-13] An ultrafast all-optical switching with the response time on the order of 10 fs is demonstrated in a three-dimensional opal polystyrene nonlinear photonic crystal by means of precise femtosecond pump-probe technique. The... Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions [作者：Wang, JY; Lee, CY; Chen, YT; Chen, CT; Chen, YL; Lin, CF; Chen, YF,期刊：Applied Physics Letters, 页码：131117-131117 , 文章类型： Article，,卷期：2009年95-13] Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to... Photon-number resolving performance of the InGaAs/InP avalanche photodiode with short gates [作者：Chen, XL; Wu, E; Xu, LL; Liang, Y; Wu, G; Zeng, HP,期刊：Applied Physics Letters, 页码：131118-131118 , 文章类型： Article，,卷期：2009年95-13] By using a self-differencing circuit to achieve efficient spike cancellation for the near-infrared single-photon detector based on InGaAs/InP avalanche photodiode, we verified that shortening the gate duration enforced t... Nonpolar GaN substrates grown by ammonothermal method [作者：Kucharski, R; Rudzinski, M; Zajac, M; Doradzinski, R; Garczynski, J; Sierzputowski, L; Kudrawiec, R; Serafinczuk, J; Strupinski, W; Dwilinski, R,期刊：Applied Physics Letters, 页码：131119-131119 , 文章类型： Article，,卷期：2009年95-13] In this letter, the authors demonstrate large size m-plane GaN substrates grown by ammonothermal method. These substrates have excellent structural quality. The concentration of threading dislocation density is below 5 x... Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at similar to 2.6 mu m [作者：Arafin, S; Bachmann, A; Kashani-Shirazi, K; Amann, MC,期刊：Applied Physics Letters, 页码：131120-131120 , 文章类型： Article，,卷期：2009年95-13] In this paper, electrically pumped GaSb-based vertical-cavity surface-emitting lasers operating continuous wave at a record long emission wavelength of similar to 2.6 mu m are presented. Owing to the excellent thermal he... Effect of Co, Ni, and Cu substitution on the electronic structure of hexagonal YMnO3 studied by x-ray absorption spectroscopy [作者：Asokan, K; Chen, YS; Pao, CW; Tsai, HM; Lee, CWO; Lin, CH; Hsueh, HC; Ling, DC; Pong, WF; Chiou, JW; Tsai, MH; Pena, O; Moure, C,期刊：Applied Physics Letters, 页码：131901-131901 , 文章类型： Article，,卷期：2009年95-13] X-ray absorption spectroscopy measurements have been performed to elucidate local electronic and atomic structures of orthorhombic 3d-transition metal-doped yttrium manganites (YMnO3) with chemical formulae YMn2/3Me1/3O3... In situ studies of interfacial contact evolution via a two-axis deflecting cantilever microinstrument [作者：Liu, F; Laboriante, I; Bush, B; Roper, CS; Carraro, C; Maboudian, R,期刊：Applied Physics Letters, 页码：131902-131902 , 文章类型： Article，,卷期：2009年95-13] The time-dependent assessment of two contacting polycrystalline silicon surfaces is realized using a microinstrument that allows for in situ surface analysis. The evolution in contact resistance, morphology, and chemistr... Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots [作者：Renard, J; Kandaswamy, PK; Monroy, E; Gayral, B,期刊：Applied Physics Letters, 页码：131903-131903 , 文章类型： Article，,卷期：2009年95-13] We present a temperature-dependent time-resolved photoluminescence study of the nonradiative processes in polar GaN/AlN quantum dots and quantum wells. The photoluminescence decay times of quantum wells drop above 50 K d... A body-centered-cubic polymorph of the Ge2Sb2Te5 phase change alloy [作者：Cheng, YQ; Xu, M; Sheng, HW; Meng, Y; Han, XD; Ma, E,期刊：Applied Physics Letters, 页码：131904-131904 , 文章类型： Article，,卷期：2009年95-13] In Ge2Sb2Te5 (GST), the prototype phase-change alloy for data storage, in situ x-ray diffraction experiments reveal a pressure-induced crystalline-amorphous-crystalline transition sequence, all at the same fixed composit... Observations on the melting of Au nanoparticle deposits and alloying with Ni via in situ synchrotron radiation x-ray diffraction [作者：Kao, TH; Song, JM; Chen, IG; Dong, TY; Hwang, WS; Lee, HY,期刊：Applied Physics Letters, 页码：131905-131905 , 文章类型： Article，,卷期：2009年95-13] Through monitoring the evolution of the x-ray diffraction peaks, the transient low temperature melting of Au nanoparticles and following alloying with the substrate were demonstrated via in situ synchrotron radiation x-r... Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress [作者：Lee, S; Jeon, K; Park, JH; Kim, S; Kong, D; Kim, DM; Kim, DH; Kim, S; Kim, S; Hur, J; Park, JC; Song, I; Kim, CJ; Park, Y; Jung, UI,期刊：Applied Physics Letters, 页码：132101-132101 , 文章类型： Article，,卷期：2009年95-13] Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias st... ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure [作者：Dumont, J; Hackens, B; Faniel, S; Mouthuy, PO; Sporken, R; Melinte, S,期刊：Applied Physics Letters, 页码：132102-132102 , 文章类型： Article，,卷期：2009年95-13] The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and the... Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation [作者：Kurosawa, M; Kawabata, N; Sadoh, T; Miyao, M,期刊：Applied Physics Letters, 页码：132103-132103 , 文章类型： Article，,卷期：2009年95-13] Orientation-controlled Si films on transparent insulating substrates are strongly desired to achieve high-efficiency thin-film solar cells. We have developed the interfacial-oxide layer modulated Al-induced low temperatu...