- Chemical structure of the (Zn1-x, Mg-x)O/Culn(S, Se)(2) interface in thin film solar cells
[作者：Erfurth, F; Hussmann, B; Scholl, A; Reinert, F; Grimm, A; Lauermann, I; Bar, M; Niesen, T; Palm, J; Visbeck, S; Weinhardt, L; Umbach, E,期刊：Applied Physics Letters, 页码：122104-122104 , 文章类型： Article，,卷期：2009年95-12]
- The formation of the interface between a magnetron sputtered (Zn1-x, Mg-x)O buffer layer and a CuIn(S, Se)(2) absorber in thin film solar cells has been investigated by x-ray photoelectron spectroscopy and x-ray induced ...
- Electrical and thermoelectrical properties of SnTe-based films and superlattices
[作者：Ishida, A; Yamada, T; Tsuchiya, T; Inoue, Y; Takaoka, S; Kita, T,期刊：Applied Physics Letters, 页码：122106-122106 , 文章类型： Article，,卷期：2009年95-12]
- SnTe-based films and superlattices (SLs) were prepared and their electrical properties were measured. A EuTe/SnTe SL exhibited a hole mobility of 2720 cm(2)/V s, which is the highest value reported for any semiconductor ...
- Enhanced charge-transport in surfactant-free PbSe quantum dot films grown by a laser-assisted spray process
[作者：Dedigamuwa, G; Lewis, J; Zhang, J; Jiang, X; Mukherjee, P; Witanachchi, S,期刊：Applied Physics Letters, 页码：122107-122107 , 文章类型： Article，,卷期：2009年95-12]
- A laser-assisted spray process was developed to deposit surfactant-free PbSe quantum dot (QD) films directly on a substrate. These QDs are in close contacts with each other, forming a percolation path for charge transpor...
- Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
[作者：Sawano, K; Toyama, K; Masutomi, R; Okamoto, T; Usami, N; Arimoto, K; Nakagawa, K; Shiraki, Y,期刊：Applied Physics Letters, 页码：122109-122109 , 文章类型： Article，,卷期：2009年95-12]
- Strain dependence of hole effective mass (m*) in the strained Ge channel was systematically studied, and monotonic m* reduction by more than 20% was clearly observed when the strain increased from 0.8% up to 2.8%. The sc...
- Phonons in Ge nanowires
[作者：Peelaers, H; Partoens, B; Peeters, FM,期刊：Applied Physics Letters, 页码：122110-122110 , 文章类型： Article，,卷期：2009年95-12]
- The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigat...
- Large 1/f noise of unipolar resistance switching and its percolating nature
[作者：Lee, SB; Park, S; Lee, JS; Chae, SC; Chang, SH; Jung, MH; Jo, Y; Kahng, B; Kang, BS; Lee, MJ; Noh, TW,期刊：Applied Physics Letters, 页码：122112-122112 , 文章类型： Article，,卷期：2009年95-12]
- We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was inc...
- Homogeneous linewidth of the P-31 bound exciton transition in silicon
[作者：Yang, A; Steger, M; Sekiguchi, T; Thewalt, MLW; Ager, JW; Haller, EE,期刊：Applied Physics Letters, 页码：122113-122113 , 文章类型： Article，,卷期：2009年95-12]
- The optical transitions of the shallow donor bound exciton associated with phosphorus in silicon are a subject of renewed interest due to the recent discovery that these transitions can be used to both read out and initi...
- Magnetic tunnel junction based microwave detector
[作者：Fan, X; Cao, R; Moriyama, T; Wang, W; Zhang, HW; Xiao, JQ,期刊：Applied Physics Letters, 页码：122501-122501 , 文章类型： Article，,卷期：2009年95-12]
- We investigated the tunneling magnetoresistance change in magnetic tunnel junctions in the presence of external microwaves. The changing relative angle between the free layer and the pinned layer results in a rectificati...
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