Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

[摘要]：By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (N-A) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found N-A's were much higher than the hole concentration (

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